Bandgap grading and Al0. 3Ga0. 7As heterojunction emitter for highly efficient GaAs-based solar cells
ST Hwang, S Kim, H Cheun, H Lee, B Lee… - Solar Energy Materials …, 2016 - Elsevier
Abstract Both an Al 0.3 Ga 0.7 As heterojunction in the p-type emitter and a bandgap-graded
layer in the n-type light absorbing base were employed in the GaAs-based solar cells. The …
layer in the n-type light absorbing base were employed in the GaAs-based solar cells. The …
Improving the Performance of Direct Bonded Five-Junction Solar Cells by Optimization of AlInP Window Layer
G Li, H Lu, X Li, W Zhang - Photonics, 2022 - mdpi.com
It is well-known that the quantum efficiency (QE) of inverted AlGaInP solar cells is less than
that of upright ones, and the mechanism has not been well-explained. In this paper, a Si …
that of upright ones, and the mechanism has not been well-explained. In this paper, a Si …
[图书][B] Development and characterization of novel III-V materials for high efficiency photovoltaics
ZS Bittner - 2019 - search.proquest.com
Photovoltaics (PV) are an enabling technology in the field of aerospace, allowing satellites
to operate far beyond the technological limitations of chemical batteries by providing a …
to operate far beyond the technological limitations of chemical batteries by providing a …
GaP/Si anisotype heterojunction solar cells
KS Zelentsov, AS Gudovskikh - Journal of Physics: Conference …, 2016 - iopscience.iop.org
Multijunction solar cells grown on Si substrates using III-V compounds are very promising
due to potentially high efficiency (over 40%). In that case homojunction in silicon can be …
due to potentially high efficiency (over 40%). In that case homojunction in silicon can be …
Introducing a novel high-efficiency arc less heterounction DJ solar cell
S Abasian… - … , Series: Electronics and …, 2017 - casopisi.junis.ni.ac.rs
The present study was undertaken to examine the structure and performance of hetero
junctions on the fill factor, short circuit current and open circuit voltage of aInGaP/GaAsdual …
junctions on the fill factor, short circuit current and open circuit voltage of aInGaP/GaAsdual …
Characterization of InGaP heterojunction emitter quantum dot solar cells
ZS Bittner, DV Forbes, CG Bailey… - 2012 38th IEEE …, 2012 - ieeexplore.ieee.org
Heterojunction emitter InAs/GaAs quantum dot solar cells (QDSC) with an In 0.48 Ga 0.52 P
(InGaP) n-type emitter and p-type GaAs base were fabricated along with homojunction nip …
(InGaP) n-type emitter and p-type GaAs base were fabricated along with homojunction nip …
An evaluation of fabrication methods for doping superlattice devices
Recent developments have been made in the fabrication of doping superlattice solar cells.
Two main fabrication methods are presented, which demonstrate progress towards the …
Two main fabrication methods are presented, which demonstrate progress towards the …