Prediction of phosphate adsorption amount, capacity and kinetics via machine learning: A generally physical-based process and proposed strategy of using …
B Zhou, H Li, Z Wang, H Huang, Y Wang… - Chemical Engineering …, 2024 - Elsevier
The use of machine learning to predict phosphate adsorption performance by specific
adsorbent holds great promise due to its ability to save time and reveal underlying …
adsorbent holds great promise due to its ability to save time and reveal underlying …
Minimization of the threshold voltage parameter of the co-doped ZnO doped liquid crystals by machine learning algorithms
This study aims to examine the influence of the co-doped semiconductor nanostructure (Al-
Cu): ZnO on the electro-optical properties of the E7 coded pure nematic liquid crystal …
Cu): ZnO on the electro-optical properties of the E7 coded pure nematic liquid crystal …
UAV-based DEM augmentation using ConSinGAN for efficient flood parameter prediction with machine learning and 1D hydrodynamic models
Flooding disasters have a significant financial impact on metropolitan regions, highlighting
the critical need for accurate flood prediction methods. This study addresses the problem of …
the critical need for accurate flood prediction methods. This study addresses the problem of …
Behavioral-level modelling of GaN HEMT large signal based on Pelican-Gaussian process regression algorithm
H Cai, J Zhang, S Wang, M Liu, J Zhang - Microelectronics Journal, 2024 - Elsevier
In this paper, a novel technology named Pelican-Gaussian process regression machine
learning algorithm is proposed for modelling the large-signal characteristics of Gallium …
learning algorithm is proposed for modelling the large-signal characteristics of Gallium …
Development and Assessment of ML Based GaN HEMTs Small-Signal Modelling Techniques
This paper develops and assesses multiple optimized Machine Learning (ML) based
techniques to discover the appropriateness of them in modelling small-signal behaviors of …
techniques to discover the appropriateness of them in modelling small-signal behaviors of …
Intelligent Power Device Modeling using Optimal Deep Learning Approach for AlGaN/GaN HEMTs
M Priscilla, AM Babu, R Radhika - 2024 10th International …, 2024 - ieeexplore.ieee.org
AlGaN/GaN high-electron-mobility transistors (HEMTs) are the most recent sort of power
devices leveraging the characteristic features of gallium nitride (GaN) and its aluminum …
devices leveraging the characteristic features of gallium nitride (GaN) and its aluminum …