III–V/Si epitaxial tandems with a 1.7-eV GaAsP top cell promise stable power conversion
efficiencies above the fundamental limit of Si single-junction cells. However, III–V/Si epitaxial …

Abstract We present epitaxial 1.7 eV/1.1 eV GaAs 0.75 P 0.25/Si tandem cells with an NREL-
certified efficiency of 20.0%, enabled by a thermally stable tunnel junction interconnect …

This article highlights the critical role of window design on short circuit carrier collection in
rear-emitter solar cells, as demonstrated through modeling and experiment using …

To date, the greatest performance limiter in monolithic III-V/Si tandem (multijunction) solar
cells, like GaAs P/Si, is excess threading dislocation densities (TDD) resulting from the …

The solar energy industry has been growing rapidly due to decreasing costs of
manufacturing and increasing panel efficiencies. As the industry dominant crystalline Si …

El mundo de la energía solar fotovoltaica ha estado dominado por el silicio durante
décadas, gracias a la abundancia de este elemento en la corteza terrestre y sus bajos …

This work highlights the critical role of window design on short circuit carrier collection in
rear-emitter GaAs 0.75 P 0.25 solar cells. If the window design is not carefully considered …