The power semiconductor joining technology through sintering of copper nanoparticles is
well-suited for die attachment in wide bandgap (WBG) semiconductors, offering high …

The thermal sensitivity electrical parameter (TSEP) method has gained popularity for online
junction temperature (T j) estimation to enhance the operational reliability of SiC mosfet s …

Stray parameter extraction is crucial for the safe operation and stress estimation in power
electronics systems. This study proposes a multifaceted stray parameter extraction method …

Estimating the junction temperature of silicon carbide (SiC) mosfet s plays a crucial role in
enhancing their reliability in practical applications. Thermo-sensitive electrical parameters …

The degradation and failure during long-term operation restricts the wide application of
silicon carbide metal-oxide-semiconductor field effect transistors (SiC MOSFETs). And …

Online junction temperature monitoring of SiC MOSFET based on turn-off Miller plateau
voltage (VMP, off) has been explored in this work. As the junction temperature rises, VMP, off …

The fault diagnosis of the insulated-gate bipolar transistor (IGBT) module bond wire is
crucial to monitor the IGBT module's state and avoid the converter's catastrophic fault …

Accurate measurement of the junction temperature T j is crucial for ensuring safe operation
and evaluating the performance of silicon carbide (SiC) metal–oxide–semiconductor field …

Junction temperature (T j) is a critical parameter for condition monitoring and lifetime
assessment of SiC MOSFETs. As one of the temperature-sensitive electrical parameters …

Because of the advantages of high switching speed, silicon carbide (SiC) devices are widely
used in high‐power power electronic equipment. Real‐time monitoring of junction …