Low-temperature plasma-processing technologies are essential for material synthesis and
device fabrication. Not only the utilization but also the development of plasma-related …

Cyclic atomic layer etching (ALE) of SiN with high selectivity to SiO2, utilizing a
hydrofluorocarbon deposition followed by exposure to hydrogen plasma, is presented. The …

The field of low-temperature plasmas (LTPs) excels by virtue of its broad intellectual
diversity, interdisciplinarity and range of applications. This great diversity also challenges …

Cryogenic atomic layer etching (ALE) represents a promising technique for achieving
subnanoscale material removal in semiconductor processes, owing to its unique self-limiting …

Since the onset of pattern transfer technologies for chip manufacturing, various strategies
have been developed to circumvent or overcome aspect ratio dependent etching (ARDE) …

HfO 2 is a high-k material that is used in semiconductor devices. Atomic-level control of
material processing is required for the fabrication of thin films of high-k materials at …

To fabricate miniature semiconductors of 10 nm or less, various process technologies have
reached their physical limits, and new process technologies for miniaturization are required …

Abstract Systems and methods for material processing using wafer scale waves of precisely
controlled electrons in a DC plasma is presented. A surface floating potential of a substrate …

Systems and methods for material processing using wafer scale waves of precisely
controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma …

Abstract Systems and methods for material processing using wafer scale waves of precisely
controlled electrons in a DC plasma is presented. The anode and cathode of a DC plasma …