A method for reduction of off state leakage current in symmetric DG JLT
A novel method for reduction of off state leakage current in a symmetric double gate
junctionless transistor (DG JLT) is presented in this paper. In this technique a layer of …
junctionless transistor (DG JLT) is presented in this paper. In this technique a layer of …
Study of performance evaluation of various characteristics of a single phase full bridge inverter circuit using surrounded channel junctionless field effect transistor
N Das, KCD Sarma - Discover Electronics, 2024 - Springer
This paper reports the characteristics study of a single phase full bridge power electronic
inverter circuit with a new type of technology namely surrounded channel junctionless field …
inverter circuit with a new type of technology namely surrounded channel junctionless field …