In this article, commercially 1200-V asymmetric and double trench silicon carbide (SiC)
metal-oxide-semiconductor-field-effect transistors (mosfets) from two manufacturers are …

The body diode degradation in SiC power MOSFETs has been demonstrated to be caused
by basal plane dislocation (BPD)-induced stacking faults (SFs) in the drift region. To …

We report on a new electrically detected magnetic resonance (EDMR) approach involving
spin dependent charge pumping (SDCP) and spin dependent recombination (SDR) at high …

SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a
significant importance in power electronics applications. However, electrically active defects …

High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer
dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past …

The low channel-carrier mobility in commercial SiC MOSFETs has been attributed to fast
electron traps labeled “NI.” These traps exhibit anomalous behavior compared to other …

Electrically detected magnetic resonance (EDMR) is arguably the most sensitive method
available to study electrically active point defects in semiconductor devices. Most EDMR …

Color centers in silicon carbide (4H-SiC) are potentially usable as spin defects for quantum
sensing and quantum information technology. In particular, neutral divacancies (the …

We report an ultralow-field frequency-swept electrically detected magnetic resonance
(fsEDMR) measurement scheme sensitive to so-called ultrastrong coupling in paramagnetic …

We investigated interface defects formed on a-face and m-face 4H-SiC/SiO 2 interfaces after
interface nitridation by nitric oxide (NO) post-oxidation annealing (POA). Using electrically …