Smart grid technologies
The need for power semiconductor devices with high-voltage, high-frequency, and high-
temperature operation capability is growing, especially for advanced power conversion and …
temperature operation capability is growing, especially for advanced power conversion and …
A current fed two-inductor boost converter with an integrated magnetic structure and passive lossless snubbers for photovoltaic module integrated converter …
Q Li, P Wolfs - IEEE Transactions on Power Electronics, 2007 - ieeexplore.ieee.org
In this paper, a photovoltaic (PV) module integrated converter is implemented with a current
fed two-inductor boost converter cascaded with a line frequency unfolder. The current …
fed two-inductor boost converter cascaded with a line frequency unfolder. The current …
Performance evaluation of a Schottky SiC power diode in a boost PFC application
The performance of a 600 V, 4 A silicon carbide (SiC) Schottky diode (Infineon SDP04S60)
is experimentally evaluated. A 300 W boost power factor corrector (PFC) with average …
is experimentally evaluated. A 300 W boost power factor corrector (PFC) with average …
SiC-based electronics (100th anniversary of the Ioffe Institute)
AA Lebedev, PA Ivanov, ME Levinshtein… - Physics …, 2019 - iopscience.iop.org
We review the history and modern state of silicon carbide and SiC-based devices. The main
techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC …
techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC …
Chip-last (RDL-first) fan-out panel-level packaging (FOPLP) for heterogeneous integration
JH Lau, CT Ko, CY Peng, KM Yang… - Journal of …, 2020 - meridian.allenpress.com
In this investigation, the chip-last, redistribution-layer (RDL)–first, fan-out panel-level
packaging (FOPLP) for heterogeneous integration is studied. Emphasis is placed on the …
packaging (FOPLP) for heterogeneous integration is studied. Emphasis is placed on the …
[PDF][PDF] Мощные биполярные приборы на основе карбида кремния Обзор
ПА Иванов, МЕ Левинштейн… - Физика и техника …, 2005 - journals.ioffe.ru
В настоящее время освоение широкозонных материалов: карбида кремния SiC и
нитридов III-й группы—становится одним из главных направлений развития …
нитридов III-й группы—становится одним из главных направлений развития …
Design and characterization of high-voltage silicon carbide emitter turn-off thyristor
J Wang, AQ Huang - IEEE Transactions on Power Electronics, 2009 - ieeexplore.ieee.org
A novel MOS-controlled silicon carbide (SiC) thyristor device, the SiC emitter turn-off thyristor
(ETO), as a promising technology for future high-voltage and high-frequency switching …
(ETO), as a promising technology for future high-voltage and high-frequency switching …
Advanced materials for high temperature, high performance, wide bandgap power modules
CB O'Neal, B McGee, B McPherson, J Stabach… - Journal of Electronic …, 2016 - Springer
Advanced packaging materials must be utilized to take full advantage of the benefits of the
superior electrical and thermal properties of wide bandgap power devices in the …
superior electrical and thermal properties of wide bandgap power devices in the …
Low-loss, high-voltage 6H-SiC epitaxial pin diode
K Fujihira, S Tamura, T Kimoto… - IEEE Transactions on …, 2002 - ieeexplore.ieee.org
The pin diodes were fabricated using 31/spl mu/m thick n/sup-/-and p-type 6H-SiC epilayers
grown by horizontal cold-wall chemical vapor deposition (CVD) with nitrogen and aluminum …
grown by horizontal cold-wall chemical vapor deposition (CVD) with nitrogen and aluminum …
4.5 kV 4H-SiC diodes with ideal forward characteristic
H Lendenmann, A Mukhitdinov… - Proceedings of the …, 2001 - ieeexplore.ieee.org
4H-SiC diodes with 4.5 kV blocking and epitaxially grown anode emitters show near
theoretical forward voltages of 3.08 V at 100 A/cm/sup 2/and 4.10 V at 1000 A/cm/sup 2/at …
theoretical forward voltages of 3.08 V at 100 A/cm/sup 2/and 4.10 V at 1000 A/cm/sup 2/at …