Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) are a highly
efficient perspective NIR light source, with application hindered by a narrow emission band …

Cr3+-doped infrared phosphors are promising candidates for next-generation phosphor-
converted infrared light-emitting diodes (LEDs) because they can, in principle, tune and …

Alloying β-Ga 2 O 3 with Al 2 O 3 to create (Al x Ga 1− x) 2 O 3 enables ultra-wide bandgap
materials suitable for applications deep into ultraviolet. In this work, photoluminescence (PL) …

Ion-beam-induced luminescence (IBIL) measurements were performed in Cr-doped β-
Ga2O3 using both protons and helium ions, showing a strong enhancement of the Cr3+ …

In situ ion-beam-induced luminescence measurements reveal a strong enhancement of the
Cr 3+ emission yield in electrically conductive chromium doped β-Ga 2 O 3 single crystals …

β-Ga 2 O 3 is a wide bandgap semiconductor that is attractive for various applications,
including power electronics and transparent conductive electrodes. Its properties can be …

The effects of pressure on single crystals of Cr-doped gallium oxide (β-Ga 2 O 3: Cr 3+) and
aluminum gallium oxide [(Al 0.1 Ga 0.9) 2 O 3] were examined by measuring the wavelength …

In this study, the effects of annealing on the surface residual impurities and intrinsic defects
of unintentionally doped (UID) β-Ga2O3 are investigated by adopting high-temperature …

V impurities were intentionally introduced into β-Ga 2 O 3 crystals as n-type dopants to
improve the n-type conductivity of single-crystal substrates. A high-quality 0.20 mol% V …

The semi-insulating single crystal β-Ga 2 O 3 is becoming increasingly useful as a substrate
for device fabrication. Fe doping is a method for producing such substrates. Along with Fe …