Recent progress on quantum dot solar cells: a review

T Sogabe, Q Shen… - Journal of Photonics for …, 2016 - spiedigitallibrary.org
Semiconductor quantum dots (QDs) have a potential to increase the power conversion
efficiency in photovoltaic operation because of the enhancement of photoexcitation. Recent …

Concentrator multijunction solar cells

I Rey‐Stolle, JM Olson, C Algora - Handbook of concentrator …, 2016 - Wiley Online Library
This chapter reviews the fundamentals of solar cells, and shows how the concept of
multijunction solar cell emerges as a response to key loss mechanisms of single junction …

[HTML][HTML] Impact of doping on InAs/GaAs quantum-dot solar cells: A numerical study on photovoltaic and photoluminescence behavior

F Cappelluti, M Gioannini, A Khalili - Solar Energy Materials and Solar …, 2016 - Elsevier
We investigate the effect of doping on quantum dot (QD) solar cells by analysing their
behavior in terms of photovoltaic characteristic, external quantum efficiency, and …

Complete voltage recovery in quantum dot solar cells due to suppression of electron capture

A Varghese, M Yakimov, V Tokranov, V Mitin, K Sablon… - Nanoscale, 2016 - pubs.rsc.org
Extensive investigations in recent years have shown that addition of quantum dots (QDs) to
a single-junction solar cell decreases the open circuit voltage, VOC, with respect to the …

Investigation of type-II Ga (As) Sb/GaAs quantum dots embedded in an InGaAs quantum well for solar cell applications

R Neffati, A Hamrita, M Yahyaoui, K Boujdaria… - Solid State …, 2023 - Elsevier
We theoretically investigate the electronic and optical properties of charge carriers in type-II
Ga (As) Sb/GaAs quantum dots (QDs) embedded in an InGaAs quantum well (QW), to …

Dependence of quantum dot photocurrent on the carrier escape nature in InAs/GaAs quantum dot solar cells

A Cedola, F Cappelluti… - … Science and Technology, 2016 - iopscience.iop.org
This paper presents a theoretical study of the effect of the nature of the carrier escape from
quantum dots (QDs) on the performance of InAs/GaAs QD solar cells (QDSCs), based on …

Physics‐Based Modeling and Experimental Study of Si‐Doped InAs/GaAs Quantum Dot Solar Cells

AP Cédola, D Kim, A Tibaldi, M Tang… - International Journal …, 2018 - Wiley Online Library
This paper presents an experimental and theoretical study on the impact of doping and
recombination mechanisms on quantum dot solar cells based on the InAs/GaAs system …

Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices

SJ Polly, CG Bailey, AJ Grede, DV Forbes… - Journal of Crystal …, 2016 - Elsevier
Abstract Models based on continuum elasticity theory are discussed to calculate the
necessary thickness of a strain compensation (SC) layer for a superlattice (SL) of strained …

[PDF][PDF] Novel concepts for high-efficiency lightweight space solar cells

F Cappelluti, G Ghione, M Gioannini, GJ Bauhuis… - 2017 - repository.ubn.ru.nl
One of the key issues in the design and development of a satellite Photovoltaic Assembly
(PVA) is the trade-off to be made between the available volume located to the PVA, its mass …

Enhanced carrier collection efficiency and reduced quantum state absorption by electron doping in self-assembled quantum dot solar cells

T Li, H Lu, L Fu, HH Tan, C Jagadish… - Applied Physics …, 2015 - pubs.aip.org
Reduced quantum dot (QD) absorption due to state filling effects and enhanced electron
transport in doped QDs are demonstrated to play a key role in solar energy conversion …