Terahertz electronic devices
The frequency band of the electromagnetic spectrum between microwaves and infrared is
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …
nowadays defined as the Terahertz band (1 THz corresponds to 1012 Hz). The development …
Rectifying Effect in a High-Performance Ballistic Diode Bridge Based on Encapsulated Graphene with a Unique Design
The long mean free path close to a micrometer in encapsulated graphene enabled us to
rectify currents ballistically at room temperature. In this study, we introduce a ballistic rectifier …
rectify currents ballistically at room temperature. In this study, we introduce a ballistic rectifier …
Frequency mixing and phase detection functionalities of three-terminal ballistic junctions
Three-terminal ballistic junctions (TBJs) are fabricated from a high-mobility InP/In 0.75 Ga
0.25 As heterostructure by electron-beam lithography. The voltage output from the central …
0.25 As heterostructure by electron-beam lithography. The voltage output from the central …
Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring
We investigate ballistic transport and quantum interference in a nanoscale quantum wire
loop fabricated as a GaAs/AlGaAs field-effect heterostructure. Four-terminal measurements …
loop fabricated as a GaAs/AlGaAs field-effect heterostructure. Four-terminal measurements …
A novel SR latch device realized by integration of three-terminal ballistic junctions in InGaAs/InP
In this letter, a novel sequential logic device based on three-terminal ballistic junctions
(TBJs) is proposed and demonstrated. Two TBJs and two in-plane gates are laterally …
(TBJs) is proposed and demonstrated. Two TBJs and two in-plane gates are laterally …
Full-wave rectification based upon hot-electron thermopower
The hot-electron thermopower of a quantum point contact (QPC) is exploited for full-wave
rectification at low temperatures. In a nanoscale AlGaAs/GaAs cross junction with orthogonal …
rectification at low temperatures. In a nanoscale AlGaAs/GaAs cross junction with orthogonal …
Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers
D Salloch, U Wieser, U Kunze, T Hackbarth - Applied Physics Letters, 2009 - pubs.aip.org
Injection-type ballistic rectifiers on Si/SiGe are studied with respect to the influence of gate
voltage on the transfer resistance RT (output voltage divided by input current) for different …
voltage on the transfer resistance RT (output voltage divided by input current) for different …
[PDF][PDF] Quantum transport in nanostructures: From the effects of decoherence on localization to magnetotransport in two-dimensional electron systems
T Stegmann - 2014 - core.ac.uk
In this thesis, quantum transport in nanostructures is studied theoretically by means of the
nonequilibrium Green's function (NEGF) method. Starting with coherent systems, we discuss …
nonequilibrium Green's function (NEGF) method. Starting with coherent systems, we discuss …
Self-gating in an electron Y-branch switch at room temperature
The authors have observed a self-gating effect in electron Y-branch switches at room
temperature. The devices, with geometrical branch widths smaller than 50 nm, were …
temperature. The devices, with geometrical branch widths smaller than 50 nm, were …
Transverse rectification in density-modulated two-dimensional electron gases
A Ganczarczyk, S Rojek, A Quindeau, M Geller… - Physical Review B …, 2012 - APS
We demonstrate tunable transverse rectification in a density-modulated two-dimensional
electron gas (2DEG). The density modulation is induced by two surface gates, running in …
electron gas (2DEG). The density modulation is induced by two surface gates, running in …