Selective etching of silicon oxide (SiO2) against silicon (Si) using anhydrous hydrogen
fluoride (HF) vapor has been used for semiconductor device fabrication. We studied the …

We studied the atomic layer deposition (ALD) of titanium oxide (TiO2) thin films using a
newly developed heteroleptic titanium precursor with a linked ligand. The titanium …

With the rapid development of renewable energy and semiconductor industries, the
preparation of high-quality polysilicon has received more and more attention. Chemical …

The authors report the reaction mechanism of the initial fluorination process on the H-
terminated Si and the OH-terminated SiO 2 surfaces with HF, CF 4, CHF 3, NF 3, and ClF 3 …

Atomic layer deposition (ALD) of metals and metal nitrides consist a major portion of the
advanced thin film deposition technology owing to their wide applications in the field of the …

We studied heteroleptic Hf precursors with a linked amido-cyclopentadienyl ligand by
density functional theory (DFT) calculation to enable high-temperature atomic layer …

A comprehensive systematic method for chemical vapor deposition modeling consisting of
seven well-defined steps is presented. The method is general in the sense that it is not …

Silicon etching has found widespread application in the semiconductor industry over recent
decades. However, the optimization of the utilized procedures has relied mainly on trial-and …

We studied co-reactants for tungsten chloride precursors by density functional theory
calculation to find the proper reducing agent. Tungsten chlorides, WCl 6 and WCl 5, are …

We report the atomic layer deposition (ALD) of silicon oxide films using a chlorine-free
silylamine precursor and ozone (O3). Bis (dimethylaminomethylsilyl) trimethylsilylamine …