Potential substitutes for critical materials in white LEDs: Technological challenges and market opportunities

P Gaffuri, E Stolyarova, D Llerena, E Appert… - … and Sustainable Energy …, 2021 - Elsevier
White light emitting diodes (wLEDs) have become, in the last decade, the most efficient
device for most lighting applications. They are mainly composed of indium and gallium for …

Review of recent progress of III-nitride nanowire lasers

S Arafin, X Liu, Z Mi - Journal of Nanophotonics, 2013 - spiedigitallibrary.org
One-dimensional compound semiconductor nanolasers, especially nanowire (NW)-based
nanolasers utilizing III-nitride (AlGaInN) materials system, are an emerging and promising …

Nanowire waveguides launching single photons in a Gaussian mode for ideal fiber coupling

G Bulgarini, ME Reimer, M Bouwes Bavinck… - Nano …, 2014 - ACS Publications
Quantum communication as well as integrated photonic circuits require single photons
propagating in a well-defined Gaussian mode. However, tailoring the emission mode to a …

Directional and polarized emission from nanowire arrays

D van Dam, DR Abujetas, R Paniagua-Dominguez… - Nano …, 2015 - ACS Publications
Lighting applications require directional and polarization control of the emitted light, which is
currently achieved by bulky optical components such as lenses, parabolic mirrors, and …

Nanowire lasers

C Couteau, A Larrue, C Wilhelm, C Soci - Nanophotonics, 2015 - degruyter.com
We review principles and trends in the use of semiconductor nanowires as gain media for
stimulated emission and lasing. Semiconductor nanowires have recently been widely …

Scalable top-down approach tailored by interferometric lithography to achieve large-area single-mode GaN nanowire laser arrays on sapphire substrate

M Behzadirad, M Nami, N Wostbrock… - ACS …, 2018 - ACS Publications
GaN nanowires are promising for optical and optoelectronic applications because of their
waveguiding properties and large optical band gap. However, developing a precise …

Analysis of polarization-dependent light extraction and effect of passivation layer for 230-nm AlGaN nanowire light-emitting diodes

YK Ooi, C Liu, J Zhang - IEEE Photonics Journal, 2017 - ieeexplore.ieee.org
This paper investigates the polarization-dependent light extraction efficiency (η extraction)
and the effect of passivation layer for AlGaN-based nanowire (NW) deep-ultraviolet (DUV) …

Wavelength-selective absorptance in GaAs, InP and InAs nanowire arrays

KM Azizur-Rahman, RR LaPierre - Nanotechnology, 2015 - iopscience.iop.org
The absorptance in vertical nanowire (nw) arrays is a result of three optical phenomena:
radial mode resonances, near-field evanescent wave coupling, and Fabry–Perot (F–P) …

Nanowire optoelectronics

Z Wang, B Nabet - Nanophotonics, 2015 - degruyter.com
Semiconductor nanowires have been used in a variety of passive and active optoelectronic
devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs) …

Nonlinear effect of carrier drift on the performance of an n-type ZnO nanowire nanogenerator by coupling piezoelectric effect and semiconduction

Y Liang, S Fan, X Chen, Y Hu - Beilstein Journal of …, 2018 - beilstein-journals.org
In piezoelectric semiconductors, electric fields drive carriers into motion/redistribution, and in
turn the carrier motion/redistribution has an opposite effect on the electric field itself. Thus …