Lanthanide dielectric with controlled interfaces
A Bhattacharyya - US Patent 7,662,693, 2010 - Google Patents
Methods and devices for a dielectric are provided. One method embodiment includes
forming a passivation layer on a Substrate, wherein the passivation layer contains a compo …
forming a passivation layer on a Substrate, wherein the passivation layer contains a compo …
Study of MOS capacitors with TiO2 and SiO2/TiO2 gate dielectric
KF Albertin, MA Valle, I Pereyra - Journal of Integrated Circuits and …, 2007 - jics.org.br
Study Of MOS Capacitors With TiO2 And SiO2/TiO2 Gate Dielectric Page 1 89 Journal
Integrated Circuits and Systems 2007; v.2 / n.2:89-93 Study Of MOS Capacitors With TiO2 And …
Integrated Circuits and Systems 2007; v.2 / n.2:89-93 Study Of MOS Capacitors With TiO2 And …
Study of reactive sputtering titanium oxide for metal-oxide-semiconductor capacitors
KF Albertin, I Pereyra - Thin Solid Films, 2009 - Elsevier
Metal oxide semiconductor (MOS) capacitors with titanium oxide (TiOx) dielectric layer,
deposited with different oxygen partial pressure (30, 35 and 40%) and annealed at 550, 750 …
deposited with different oxygen partial pressure (30, 35 and 40%) and annealed at 550, 750 …
Lanthanide dielectric with controlled interfaces
A Bhattacharyya - US Patent 7,956,426, 2011 - Google Patents
US7956426B2 - Lanthanide dielectric with controlled interfaces - Google Patents US7956426B2
- Lanthanide dielectric with controlled interfaces - Google Patents Lanthanide dielectric with …
- Lanthanide dielectric with controlled interfaces - Google Patents Lanthanide dielectric with …
[HTML][HTML] Cubic crystalline erbium oxide growth on GaN (0001) by atomic layer deposition
Growth of crystalline Er 2 O 3, a rare earth sesquioxide, on GaN (0001) is described. Ex situ
HCl and NH 4 OH solutions and an in situ N 2 plasma are used to remove impurities on the …
HCl and NH 4 OH solutions and an in situ N 2 plasma are used to remove impurities on the …
[HTML][HTML] Comprehensive investigation of Er2O3 thin films grown with different ALD approaches
L Khomenkova, H Merabet, MP Chauvat, C Frilay… - Surfaces and …, 2022 - Elsevier
The effect of Er precursor nature (Er (CpMe) 3 or Er (tmhd) 3) and annealing treatment at
500–1100° C on the structural and optical properties of Er 2 O 3 films grown on Si substrates …
500–1100° C on the structural and optical properties of Er 2 O 3 films grown on Si substrates …
Low pressure MOCVD of Er2O3 and Gd2O3 films
MP Singh, T Shripathi, K Shalini… - Materials Chemistry and …, 2007 - Elsevier
In this paper, we present a comparative study of microstructure, crystallinity, and physical
properties of MOCVD-grown Er2O3 and Gd2O3 films, which are grown under identical …
properties of MOCVD-grown Er2O3 and Gd2O3 films, which are grown under identical …
Physical and electrical characterization of Ce-HfO2 thin films deposited by thermal atomic layer deposition
This paper describes the deposition and characterization of Ce-modified HfO 2 thin films.
Layers were deposited on Si (100) substrates by thermal atomic layer deposition using …
Layers were deposited on Si (100) substrates by thermal atomic layer deposition using …
Study of TiO2 and SiO2/TiO2 as Gate Dielectric Maaterials
KF Albertin, MA Valle, I Pereyra - ECS Transactions, 2007 - iopscience.iop.org
ABSTRACT MOS capacitors with TiO2 and TiO2/SiO2 dielectric layer were fabricated and
characterized. TiO2 films where physical characterized by Rutherford Backscattering …
characterized. TiO2 films where physical characterized by Rutherford Backscattering …
Pr O Al N dielectrics for metal insulator semiconductor stacks
K Henkel, M Torche, R Sohal, K Karavaev… - … status solidi (a), 2011 - Wiley Online Library
This work focuses on praseodymium oxide films as a high‐k material on silicon and silicon
carbide (SiC) in metal insulator semiconductor samples. The electrical results are correlated …
carbide (SiC) in metal insulator semiconductor samples. The electrical results are correlated …