Emerging two‐dimensional tellurene and tellurides for broadband photodetectors

Z Yan, H Yang, Z Yang, C Ji, G Zhang, Y Tu, G Du… - Small, 2022 - Wiley Online Library
As with all stylish 2D functional materials, tellurene and tellurides possessing excellent
physical and chemical properties such as high environmental stability, tunable narrow …

In Situ Fabrication of PdSe2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio

D Wu, M Xu, L Zeng, Z Shi, Y Tian, XJ Li, CX Shan… - ACS …, 2022 - ACS Publications
Polarization-sensitive ultraviolet (UV) photodetection is of great technological importance for
both civilian and military applications. Two-dimensional (2D) group-10 transition-metal …

Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors

J Ai, M Qin, M Xue, C Cao, J Zhang… - Advanced Functional …, 2024 - Wiley Online Library
The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs)
with enhanced performance. At present, various III–V nanomaterials are systematically …

Structural and optoelectronic characteristics of β-Ga 2 O 3 epitaxial films with Zn alloying and subsequent oxygen annealing

X Sun, K Liu, X Chen, Q Hou, Z Cheng… - Journal of Materials …, 2023 - pubs.rsc.org
Pure and∼ 7.5 at% Zn alloyed β-Ga2O3 epitaxial films were epitaxially grown by metal
organic chemical vapor deposition choosing sapphire (c-plane) as substrates, followed by …

Monolithically integrated UVC AlGaN-based multiple quantum wells structure and photonic chips for solar-blind communications

R He, N Liu, Y Gao, R Chen, S Zhang, H Yuan, Y Duo… - Nano Energy, 2022 - Elsevier
High quality AlGaN material growth and chip fabrication of monolithically integrated solar
blind light-emitting diodes (LEDs), waveguides and photodetectors (PDs) on an AlGaN multi …

Epitaxial Growth of the Large-Scale, Highly-Ordered 3D GaN-Truncated Pyramid Array Toward an Ultrahigh Rejection Ratio and Responsivity Visible-Blind Ultraviolet …

W Song, Y Sun, X He, S Li - ACS Applied Materials & Interfaces, 2024 - ACS Publications
The micro-and nanostructures of III-nitride semiconductors captivate strong interest owing to
their distinctive properties and myriad potential applications. Nevertheless, challenges …

High-performance self-powered GaN/PEDOT: PSS hybrid heterojunction UV photodetector for optical communication

S Li, Z Liu, ML Zhang, LL Yang, YF Guo… - Science China …, 2024 - Springer
Self-powered ultraviolet photodetectors (UVPDs) provide great possibility for the next-
generation energy conservation optical communication technology; while the high …

Zero-bias Bi-based perovskite image sensor arrays with direct laser-scribing process

Y Yang, Y Li, D Chen, G Shen - Journal of Materials Chemistry C, 2023 - pubs.rsc.org
Bi-based halide perovskites have the characteristics of low toxicity, air stability, long carrier
diffusion lifetime, and large light absorption coefficient, making them promising candidates …

Unleashing the Power of Quantum Dots: Emerging Applications from Deep‐Ultraviolet Photodetectors for Brighter Futures

T Park, DH Lee, J Hur, H Yoo - Advanced Optical Materials, 2024 - Wiley Online Library
Since their discovery in 1981, quantum dots (QDs) have been the center of attention in
optoelectronic fields owing to their excellent properties such as clearly discrete band …

Vertical Van Der Waals Epitaxy of p‐MoxRe1‐Xs2 on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Z Jiang, J Zhou, B Li, Z Ma, Z Huang… - Advanced Optical …, 2024 - Wiley Online Library
Abstract van der Waals (vdW) heterogeneous integration and doping engineering have
emerged as crucial factors in advancing the development of functional device systems. This …