HF-QSRAM: half-select free quaternary SRAM design with required peripheral circuits for IoT/IoVT applications
By using CNFET technology in 32 nm node by the proposed SQI gate, two split bit-lines
QSRAM architectures have been suggested to address the issue of increasing demand for …
QSRAM architectures have been suggested to address the issue of increasing demand for …
A Compact Model for Carbon Nanotube Field Effect Transistors Incorporating Temperature Effects and Application for Operational Amplifier Design
Y Zou, H Liu, Y Liu, M Yin, W Zhang… - ECS Journal of Solid …, 2024 - iopscience.iop.org
Semiconducting carbon nanotubes (CNTs), characterized by high carrier mobility and
atomic thickness, are considered ideal channel materials for building high-performance and …
atomic thickness, are considered ideal channel materials for building high-performance and …
Design of Energy-Delay Efficient and Variation Tolerant Cntfet Based Ternary Adders
Two newly designed ternary adders, one single supplied and one dual supplied, are
presented in this work. The models are constructed based on Virtual Source Carbon …
presented in this work. The models are constructed based on Virtual Source Carbon …