Theoretical analysis of multiple quantum-well, slow-light devices under applied external fields using a fully analytical model in fractional dimension
R Kohandani, H Kaatuzian - Quantum Electronics, 2015 - iopscience.iop.org
We report a theoretical study of optical properties of AlGaAs/GaAs multiple quantum-well
(MQW), slow-light devices based on excitonic population oscillations under applied external …
(MQW), slow-light devices based on excitonic population oscillations under applied external …
Analysis and investigation of temperature and hydrostatic pressure effects on optical characteristics of multiple quantum well slow light devices
S Abdolhosseini, R Kohandani, H Kaatuzian - Applied optics, 2017 - opg.optica.org
This paper represents the influences of temperature and hydrostatic pressure variations on
GaAs/AlGaAs multiple quantum well slow light systems based on coherence population …
GaAs/AlGaAs multiple quantum well slow light systems based on coherence population …
Analysis of the influence of geometrical dimensions and external magnetic field on optical properties of InGaAs/GaAs quantum-dot slow light devices
B Choupanzadeh, H Kaatuzian… - Quantum …, 2018 - iopscience.iop.org
The effect of the size of quantum dots (QDs) and an external magnetic field on InGaAs/GaAs
QD slow light devices based on coherent population oscillations (CPOs) is simulated …
QD slow light devices based on coherent population oscillations (CPOs) is simulated …
Well width and alloy concentration dependence of optical properties of slow light devices
H Kaatuzian, R Kohandani - 2015 23rd Iranian Conference on …, 2015 - ieeexplore.ieee.org
This paper theoretically presents a technique for characteristics tuning of AlGaAs/GaAs
multiple quantum well (MQW) slow light devices based on excitonic population oscillations …
multiple quantum well (MQW) slow light devices based on excitonic population oscillations …
Investigating Absorption Cross Section and Oscillator Strength for Double Quantum Well with Pöschl-Teller Potential
Absorption cross section of triple barrier double quantum well structure is analytically
computed with Pöschl-Teller potential geometry considering the intraband transition from …
computed with Pöschl-Teller potential geometry considering the intraband transition from …
Theoretical Investigation of effects of Size Variations and External Magnetic Field on Binding Energy and Center Frequency in InGaAs/GaAs Quantum Dot Slow Light …
B Choupanzadeh, H Kaatuzian - 2019 27th Iranian Conference …, 2019 - ieeexplore.ieee.org
This paper theoretically investigates the effects of changing external magnetic field intensity
on exciton binding energy and center frequency in Quantum Dot (QD) slow light devices …
on exciton binding energy and center frequency in Quantum Dot (QD) slow light devices …
Анализ влияния изменений геометрических размеров и внешнего магнитного поля на оптические свойства замедлителей света на квантовых точках InGaAs …
Б Чупанзаде, Х Каатузян, Р Кохандани - Квантовая электроника, 2018 - mathnet.ru
Проведено моделирование влияния размеров квантовых точек (КТ) и внешнего
магнитного поля на замедлители света, действие которых основано на когерентных …
магнитного поля на замедлители света, действие которых основано на когерентных …
Computing Density of States for Pöschl–Teller Potential in Double Quantum Well Structure
Density of states for Pöschl–Teller potential in double quantum well structure is analytically
computed in the presence of external electric bias applied along quantized direction …
computed in the presence of external electric bias applied along quantized direction …
Теоретический анализ устройств на медленном свете в множественных квантовых ямах, находящихся под действием приложенных внешних полей, с …
Р Кохандани, Х Каатузян - Квантовая электроника, 2015 - mathnet.ru
Представлены результаты теоретического исследования оптических свойств
устройств на медленном свете в множественных квантовых AlGaAs/GaAs-ямах …
устройств на медленном свете в множественных квантовых AlGaAs/GaAs-ямах …
Теоретическое исследование влияния толщины барьера на оптические свойства полупроводникового устройства для замедления света на множественных …
С Абдолхоссейни, Х Каатузян, Р Кохандани… - Квантовая …, 2018 - mathnet.ru
Дано объяснение влияния толщины барьера на функционирование устройств для
замедления света на множественных квантовых ямах (МКЯ) в GaAs/AlGaAs как …
замедления света на множественных квантовых ямах (МКЯ) в GaAs/AlGaAs как …