Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
TD Moustakas, R Paiella - Reports on Progress in Physics, 2017 - iopscience.iop.org
This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
Development of InGaN-based red LED grown on (0001) polar surface
We report on the optical properties of the InGaN-based red LED grown on a c-plane
sapphire substrate. Blue emission due to phase separation was successfully reduced in the …
sapphire substrate. Blue emission due to phase separation was successfully reduced in the …
Progress in modeling of III-nitride MOVPE
M Dauelsberg, R Talalaev - … in Crystal Growth and Characterization of …, 2020 - Elsevier
This review provides an introduction to III-Nitrides MOVPE process modeling and its
application to the design and optimization of MOVPE processes. Fundamentals of the …
application to the design and optimization of MOVPE processes. Fundamentals of the …
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
We obtain temperature-dependent recombination coefficients by measuring the quantum
efficiency and differential carrier lifetimes in the state-of-the-art InGaN light-emitting diodes …
efficiency and differential carrier lifetimes in the state-of-the-art InGaN light-emitting diodes …
Carrier localization in InGaN by composition fluctuations: implication to the “green gap”
SY Karpov - Photonics Research, 2017 - opg.optica.org
A simple semi-empirical model for radiative and Auger recombination constants is
suggested, accounting for hole localization by composition fluctuations in InGaN alloys …
suggested, accounting for hole localization by composition fluctuations in InGaN alloys …
[HTML][HTML] Carrier dynamics in blue, cyan, and green InGaN/GaN LEDs measured by small-signal electroluminescence
We study the carrier dynamics for c-plane InGaN/GaN light-emitting diodes (LEDs) with
various emission wavelengths near the green gap using a small-signal electroluminescence …
various emission wavelengths near the green gap using a small-signal electroluminescence …
Stress engineering for reducing the injection current induced blue shift in InGaN-based red light-emitting diodes
Long visible light-emitting diodes (LEDs) have been proven promising in solid-state lighting
covering all visible wavelengths. However, the efficiency of LEDs with high indium content in …
covering all visible wavelengths. However, the efficiency of LEDs with high indium content in …
Pseudomorphic growth of thick Al0. 6Ga0. 4N epilayers on AlN substrates
S Rathkanthiwar, J Houston Dycus, S Mita… - Applied Physics …, 2022 - pubs.aip.org
We report on the absence of strain relaxation mechanism in Al 0.6 Ga 0.4 N epilayers grown
on (0001) AlN substrates for thickness as large as 3.5 μm, three-orders of magnitude beyond …
on (0001) AlN substrates for thickness as large as 3.5 μm, three-orders of magnitude beyond …
Step pinning and hillock formation in (Al, Ga) N films on native AlN substrates
The influence of edge-type threading dislocations (TDs) on the epitaxial growth of AlGaN on
native AlN substrates was investigated theoretically and experimentally. In the step flow …
native AlN substrates was investigated theoretically and experimentally. In the step flow …
Initial stages of misfit stress relaxation in composite nanostructures through generation of rectangular prismatic dislocation loops
MY Gutkin, AM Smirnov - Acta Materialia, 2015 - Elsevier
Critical (necessary) conditions of misfit stress relaxation in bulk and hollow core–shell
nanoparticles, bulk and hollow core–shell nanowires, and flat bi-and tri-nanolayers …
nanoparticles, bulk and hollow core–shell nanowires, and flat bi-and tri-nanolayers …