Graphene and related materials for resistive random access memories

F Hui, E Grustan‐Gutierrez, S Long… - Advanced Electronic …, 2017 - Wiley Online Library
Graphene and related materials (GRMs) are promising candidates for the fabrication of
resistive random access memories (RRAMs). Here, this emerging field is analyzed …

ZnO-based hybrid nanocomposite for high-performance resistive switching devices: Way to smart electronic synapses

A Kumar, K Preeti, SP Singh, S Lee, A Kaushik… - Materials Today, 2023 - Elsevier
Neuromorphic computing systems inspired by the human brain emulate biological synapses
electronically for information handling and processing. Recently, memristive switching …

Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

FY Rahman, R Deb, S Sarkar, H Banik… - ACS Applied …, 2023 - ACS Publications
Development of biocompatible and biodegradable information storage could be one of the
major strides toward the advancement of the next-generation eco-friendly electronics …

Carrier mechanism of ZnO nanoparticles-embedded PMMA nanocomposite organic bistable memory device

SP Singh, SK Sharma, DY Kim - Solid State Sciences, 2020 - Elsevier
ZnO nanoparticles embedded polymethylmethacrylate (ZnO-PMMA) organic bistable
memory device was fabricated by sol-gel spin coating technique. ZnO-PMMA thin films were …

Improved uniformity in resistive switching behaviors based on PMMA films with embedded carbon quantum dots

L Li, B Liu, J Feng, W Hu, H Lin, Y Huang, D Wu… - Applied Physics …, 2021 - pubs.aip.org
The growth and rupture of conductive filaments act a crucial part in the reliability of resistive
switching behaviors. The random growth and rupture of conductive filaments are the primary …

Organic flexible memristor with reduced operating voltage and high stability by interfacial control of conductive filament growth

SH Lee, HL Park, CM Keum, IH Lee… - physica status solidi …, 2019 - Wiley Online Library
Herein, the underlying mechanisms for the growth of conductive filaments (CFs) at a metal–
polymer electrolyte interface through ion migration in organic electrochemical metallization …

Transferable and flexible resistive switching memory devices based on PMMA films with embedded Fe3O4 nanoparticles

Y Lin, HY Xu, ZQ Wang, T Cong, WZ Liu, HL Ma… - Applied Physics …, 2017 - pubs.aip.org
We demonstrated transferable and flexible resistive switching (RS) memory devices using a
nondestructive water-dissolution method. To satisfy future demands, the free-standing Al/Fe …

Programmable electronic synapse and nonvolatile resistive switches using MoS2 quantum dots

A Thomas, AN Resmi, A Ganguly, KB Jinesh - Scientific Reports, 2020 - nature.com
Brain-inspired computation that mimics the coordinated functioning of neural networks
through multitudes of synaptic connections is deemed to be the future of computation to …

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

H Banik, S Sarkar, D Bhattacharjee, A Malhotra… - ACS …, 2023 - ACS Publications
Biocompatibility and transient nature of electronic devices have been the matter of attention
in recent times due to their immense potential for sustainable solutions toward hazardous e …

Nonvolatile ternary resistive switching memory devices based on the polymer composites containing zinc oxide nanoparticles

Y Sun, D Wen, X Bai - Physical Chemistry Chemical Physics, 2018 - pubs.rsc.org
Nonvolatile ternary memory devices were fabricated from the composites polymer blends
containing zinc oxide (ZnO) nanoparticles. When applying a negative bias on the top …