Development of hafnium based high-k materials—A review
The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …
field effect transistor is considered one of the most dramatic advances in materials science …
Review on analog/radio frequency performance of advanced silicon MOSFETs
V Passi, JP Raskin - Semiconductor Science and Technology, 2017 - iopscience.iop.org
Aggressive gate-length downscaling of the metal-oxide-semiconductor field-effect transistor
(MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This …
(MOSFET) has been the main stimulus for the growth of the integrated circuit industry. This …
X-ray Photoelectron Spectroscopy Depth Profiling of La2O3/Si Thin Films Deposited by Reactive Magnetron Sputtering
The La2O3/Si thin films have been deposited by reactive DC magnetron sputtering.
Amorphous state of La2O3 layer has been shown by RHEED observation. Top surface …
Amorphous state of La2O3 layer has been shown by RHEED observation. Top surface …
Sm 2 O 3 and Sm 2 O 3-based nanostructures for photocatalysis, sensors, CO conversion, and biological applications
MM Khan, SN Matussin - Catalysis Science & Technology, 2023 - pubs.rsc.org
Metal oxide nanoparticles have gained popularity owing to their unique properties. Recently,
metal oxides, particularly rare-earth metal oxides, have been explored and used in several …
metal oxides, particularly rare-earth metal oxides, have been explored and used in several …
A quasi-passivated film formed on as-solutionized Mg-Sm-Zn-Zr alloy in NaCl solution
Benefiting from a quasi-passivated film, as-solutionized Mg-Sm-Zn-Zr alloy exhibits an
extraordinary corrosion resistance over currently reported Mg alloys. The breakdown …
extraordinary corrosion resistance over currently reported Mg alloys. The breakdown …
Effect of gate dielectric thicknesses on MOS photodiode performance and electrical properties
ET Salim, AI Hassan, SA Naaes - Materials Research Express, 2019 - iopscience.iop.org
Different film thickness was used to investigate the effect of the Al 2 O 3 as a dielectric
material for the fabrication of Al/AL 2 O 3/Si/Al MOS diode. Chemical spray pyrolysis method …
material for the fabrication of Al/AL 2 O 3/Si/Al MOS diode. Chemical spray pyrolysis method …
Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate …
P Lagger, P Steinschifter, M Reiner… - Applied Physics …, 2014 - pubs.aip.org
The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-
semiconductor structures causes tremendous threshold voltage drifts, ΔV th, under forward …
semiconductor structures causes tremendous threshold voltage drifts, ΔV th, under forward …
Lanthanide rare earth oxide thin film as an alternative gate oxide
An ultrathin gate oxide is needed for future nanoscale technology due to the density of
integrated circuits will increase exponentially every two to three years as predicted by …
integrated circuits will increase exponentially every two to three years as predicted by …
A highly efficient rare earth metal oxide nanorods based platform for aflatoxin detection
The nanostructured rare earth metal oxide (samarium oxide, n-Sm2O3) nanorods, prepared
using a forced hydrolysis technique, have been electrophoretically deposited (EPD) onto an …
using a forced hydrolysis technique, have been electrophoretically deposited (EPD) onto an …
Sm2O3 gate dielectric on Si substrate
High dielectric constant (κ) materials have become a necessity for down scaling of metal-
oxide-semiconductor (MOS) based devices. Rare-earth oxides have been studied as …
oxide-semiconductor (MOS) based devices. Rare-earth oxides have been studied as …