The transport properties of the TmxMn1–xS (x≤ 0.15) solid solutions in the temperature
range of 200–600 K have been investigated. The temperatures of lattice polaron pinning …

Exploring potential spintronic functionalities in resistive switching (RS) devices is of great
interest for creating new applications, such as multifunctional resistive random‐access …

The possibility of affecting the magnetic properties of a material by dielectric means, and
vice versa, remains an attractive perspective for modern electronics and spintronics. Here …

Magnetoresistance and rectification are two fundamental physical properties of
heterojunctions and respectively have wide applications in spintronics devices. Being …

We report on a large (∼ 200%), room-temperature, small field (20 mT) magnetoresistance
effect in germanium and silicon-diode combined device. This enhanced magnetoresistance …

We report an enhanced linear magnetoresistance in germanium at room temperature. The
magnetic-field dependence shows no saturation at magnetic fields (B) up to 4 T and the …

We report a large but asymmetric magnetoresistance in silicon pn junctions, which contrasts
with the fact of magnetoresistance being symmetric in magnetic metals and semiconductors …

The negative differential resistance (NDR) effect and magnetoresistance (MR) effect attract a
lot of attention since they have been widely applied in fields such as circuit amplifiers and …

Non-magnetic semiconductor materials and their devices have attracted wide attention since
they are usually prone to exhibit large positive magnetoresistance (MR) effect in a low static …

Magnetoresistance (MR) for n-type germanium wafers by in-line-four-terminal method at
room temperature are explored. Conspicuously, the variation of the measured MR as a …