The spin degree of freedom of an electron or a nucleus is one of the most basic properties of
nature and functions as an excellent qubit, as it provides a natural two-level system that is …

Our recent work on the electronic and optical properties of semiconductor and graphene
quantum dots is reviewed. For strained self-assembled InAs quantum dots on GaAs or InP …

Single spins in the solid state offer a unique opportunity to store and manipulate quantum
information, and to perform quantum-enhanced sensing of local fields and charges. Optical …

Using single spins in semiconductor quantum dots as qubits requires full control over the
spin state. As the g tensor provides the coupling in a Hamiltonian between a spin and an …

Strong electrically tunable exciton g factors are observed in individual (Ga) InAs self-
assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight …

The preparation of a coherent heavy-hole spin via ionization of a spin-polarized electron-
hole pair in an InAs/GaAs quantum dot in a Voigt geometry magnetic field is experimentally …

We investigate the all-electrical tuning of the Landé g tensor in a single uncapped InAs
quantum dot contacted with a nanogap electrode technique and electrically gated with both …

We calculate the dependence on an applied electric field of the g tensor of a single electron
in a self-assembled In As∕ Ga As quantum dot. We identify dot sizes and shapes for which …

Three-dimensional anisotropy of the Landé g factor and its electrical modulation are studied
for single uncapped InAs self-assembled quantum dots (QDs). The g factor is evaluated from …

The electric field dependence of the exciton g factor and the fine structure splitting in self-
assembled InGaAs/GaAs quantum dots grown via a flush-overgrowth technique is studied …