From molecules to bismuth oxide-based materials: Potential homo-and heterometallic precursors and model compounds

M Mehring - Coordination Chemistry Reviews, 2007 - Elsevier
Bismuth-containing heterometallic oxides are promising candidates for a variety of
applications with respect to the microelectronics industry. This is not only because of their …

Optimized dielectric energy storage performance in ZnO-modified Bi0. 5Na0. 5TiO3-Sr0. 7Bi0. 2□ 0.1 TiO3 ceramics with composite structure and element …

X Zhou, G Xue, Y Su, H Luo, Y Zhang, D Wang… - Chemical Engineering …, 2023 - Elsevier
In this work, ZnO is introduced into the 0.55 Bi 0.5 Na 0.5 TiO 3-0.45 Sr 0.7 Bi 0.2□ 0.1 TiO 3
(BNT-SBT) to optimize the dielectric energy storage performance. ZnO is not only used as a …

Bi2Ti2O7: It Is Not What You Have Read

JR Esquivel-Elizondo, BB Hinojosa… - Chemistry of …, 2011 - ACS Publications
Coprecipitation synthesis methods followed by microwave sintering techniques were utilized
to obtain dense phase pure Bi2Ti2O7 polycrystalline ceramic pellets. No evidence of …

Synthesis, phase transformation and dielectric properties of sol–gel derived Bi2Ti2O7 ceramics

WF Su, YT Lu - Materials chemistry and physics, 2003 - Elsevier
Sol–gel derived Bi2Ti2O7 ceramic powders have been prepared from methoxyethoxides of
bismuth and titanium (molar ratio of Ti/Bi= 1.23 and water/alkoxides= 1.31). The Bi2Ti2O7 …

First-principles study of cubic Bi pyrochlores

BB Hinojosa, JC Nino, A Asthagiri - Physical Review B—Condensed Matter …, 2008 - APS
We examined a range of cubic Bi 2 B 2 O 6 O′(B= Ti, Ru, Rh, Ir, Os, and Pt) pyrochlores
with density functional theory (DFT) calculations and report the structural parameters along …

Fe3+/Nb5+ co-doping effects on the properties of Aurivillius Bi4Ti3O12 ceramics

C Lavado, MG Stachiotti - Journal of Alloys and Compounds, 2018 - Elsevier
Abstract Bi 4 Ti 3-x (Nb 0.5 Fe 0.5) x O 12 (BTFNx) ceramics with 0≤ x≤ 2 were synthesized
to evaluate the effect of Fe 3+/Nb 5+ co-substitution into the B-site of Bi 4 Ti 3 O 12 (BIT). We …

Atomic layer CVD in the Bi–Ti–O system

M Schuisky, K Kukli, M Ritala, A Hårsta… - Chemical Vapor …, 2000 - Wiley Online Library
Thin films in the Bi–Ti–O system have, for the first time, been deposited by atomic layer CVD
(ALCVD) using triphenyl bismuth, titanium isopropoxide, and water as precursors. The …

Rapid thermal processing of Bi2Ti2O7 thin films grown by chemical solution decomposition

SW Wang, H Wang, X Wu, S Shang, M Wang, Z Li… - Journal of crystal …, 2001 - Elsevier
Bi2Ti2O7 thin films were successfully prepared on n-type Si (100) substrate by using
chemical solution decomposition (CSD) technique followed by rapid thermal annealing …

Sol–gel synthesis, structure characterization and Raman spectroscopy of Gd2− 2xBi2xTi2O7 solid solutions

A Garbout, S Bouattour, AW Kolsi - Journal of alloys and compounds, 2009 - Elsevier
In the present work a comparative study of the sol–gel process of different protocols:
centrifugation (CEN) and dryness (DRY), leading to pyrochlore oxides with different …

Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition

J Harjuoja, S Väyrynen, M Putkonen, L Niinistö… - Journal of Crystal …, 2006 - Elsevier
Bismuth silicate and bismuth titanate thin films were deposited by atomic layer deposition
(ALD). A novel approach with pulsing of two Bi-precursors was studied to control the Si/Bi …