In this Colloquium the theory of silicon nanowires is reviewed. Nanowires with diameters
below 10 nm are the focus, where quantum effects become important and the properties …

A comprehensive investigation of quantum confinement in nanowires has been carried out.
Though applied to silicon nanowires (SiNWs), it is general and applicable to all nanowires …

The structural and electronic properties of hydrogenated silicon nanowires (SiNWs) oriented
in⟨ 100⟩,⟨ 110⟩,⟨ 111⟩, and⟨ 112⟩ directions are investigated systematically using a …

Silicon nanowires (Si NWs) will likely revolutionize a wide variety of applications ranging
from field-effect transistors [1–4](FETs) and other nanoelectronics to chemical and biological …

An ab initio study of the formation and segregation energies of B and P doped and BP
codoped silicon nanowires oriented along the [110] direction is performed for fully relaxed H …

We perform ab initio calculations within the Landauer formalism to study the influence of
doping on the conductance of surface-passivated silicon nanowires. It is shown that …

We report a study of the effect of growth orientation and surface roughness on electron
transport in small-diameter hydrogen passivated silicon nanowires (NWs). We employ a …

We developed a global structure optimization method, genetic algorithm, for a fast and
efficient prediction of grain-boundary structures. Using this method we predicted the most …

We report ab initio investigations of hexagon-shaped,[111]∕[0001]-oriented III-V
semiconductor nanowires with varying crystal structure, surface passivation, surface …

The electronic structure of a single domain Si (110)-(16× 2) surface has been investigated
by high-resolution angle-resolved photoelectron spectroscopy and scanning tunneling …