Design of E-and W-band low-noise amplifiers in 22-nm CMOS FD-SOI
This article presents E-and W-band low-noise amplifiers (LNA) in GlobalFoundries 22-nm
CMOS fully depleted silicon-on-insulator (FD-SOI). Both amplifiers employ a three-stage …
CMOS fully depleted silicon-on-insulator (FD-SOI). Both amplifiers employ a three-stage …
A 102–129-GHz 39-dB gain 8.4-dB noise figure I/Q receiver frontend in 28-nm CMOS
An F-band in-phase/quadrature-phase (I/Q) receiver front-end in 28-nm CMOS for chip-to-
chip communication is presented. The receiver consists of a capacitively neutralized …
chip communication is presented. The receiver consists of a capacitively neutralized …
W-band low-power millimeter-wave low noise amplifiers (LNAs) using SiGe HBTs in saturation region
A Mukherjee, W Liang, P Sakalas… - 2019 IEEE 19th …, 2019 - ieeexplore.ieee.org
Advanced SiGe HBTs maintain quite reasonable performance even at a forward biased
base-collector junction. The associated operation in saturation enables a significant …
base-collector junction. The associated operation in saturation enables a significant …
Radiation hardened millimeter-wave receiver implemented in 90-nm, SiGe HBT technology
EM Al Seragi, S Dash, K Muthuseenu… - … on Nuclear Science, 2021 - ieeexplore.ieee.org
This article presents novel radiation hardening design techniques to substantially reduce the
single-event effects (SEEs) on high-frequency receivers subject to various radiations when …
single-event effects (SEEs) on high-frequency receivers subject to various radiations when …
A W-band SiGe transceiver with built-in self-test
S Zeinolabedinzadeh, AC Ulusoy… - 2019 IEEE 19th …, 2019 - ieeexplore.ieee.org
A fully integrated W-band silicon-germanium (SiGe) transceiver is presented which provides
a loop-back built-in self-test (BIST) functionality that allows continuous monitoring of the …
a loop-back built-in self-test (BIST) functionality that allows continuous monitoring of the …
Single-event effects in a millimeter-wave receiver front-end implemented in 90 nm, 300 GHz SiGe HBT technology
S Zeinolabedinzadeh, AC Ulusoy… - … on Nuclear Science, 2016 - ieeexplore.ieee.org
The single-event transient (SET) response of a W-band (75-110 GHz) radar receiver front-
end is investigated in this paper. A new technique to facilitate the SET testing of the high …
end is investigated in this paper. A new technique to facilitate the SET testing of the high …
Fully Integrated THz Receivers in Silicon for Imaging and Spectroscopy
E Al Seragi - 2024 - keep.lib.asu.edu
In this dissertation, enhanced coherent detection of terahertz (THz) radiation is presented for
Silicon integrated circuits (ICs). In general THz receivers implemented in silicon …
Silicon integrated circuits (ICs). In general THz receivers implemented in silicon …
Millimeter-wave Circuits and Applications
A Mukherjee, W Liang, M Schroter… - … Transistors for mm …, 2018 - books.google.com
The continuous progress of SiGe: CHBT BiCMOS process technology paves the way for
high-volume low-cost mm-wave and sub-mm-wave applications. The design of the …
high-volume low-cost mm-wave and sub-mm-wave applications. The design of the …
[图书][B] Design of Wideband Millimeter-Wave Beamformers and Transceivers in Advanced CMOS SOI Technology
L Gao - 2020 - search.proquest.com
With the development of wireless communications, high data rate is becoming essential
since it not only augments the current wireless systems but also enables many emerging …
since it not only augments the current wireless systems but also enables many emerging …
Towards Low Noise, High Power and Efficiency Mm-Wave and Terahertz Circuit Design
S Khiyabani - 2017 - search.proquest.com
Mm-wave and terahertz frequency range is gaining vast attention in recent years due to
attractive applications in various areas including spectroscopy, imaging, security and high …
attractive applications in various areas including spectroscopy, imaging, security and high …