When the integrated circuit (IC) feature size is reduced to 0.13 μm and below, copper (Cu)
becomes the new wiring material in interconnect materials. The double damascene process …

Conclusion Electrochemical impedance spectroscopy has become a mature and well-
understood technique. It is now possible to acquire, validate, and quantitatively interpret the …

Nitrilotriacetic acid (NTA) was used as a complexing agent for Co barrier chemical–
mechanical polishing (CMP), and 2, 2'-{[(methyl-1H-benzotriazol-1-yl) methyl] imino} …

A colloidal silica-based slurry (3–10 wt%) containing H 2 O 2 (1 wt%) and citric acid (50 mM)
was found to polish chemical vapor-deposited (CVD) cobalt (Co) films with removal rates …

We examined pulmonary inflammatory responses of mice following whole-body inhalation
exposure to copper and iron nanoparticles in acute and sub-acute studies. Concentrations …

The effect of complexing agents on Co oxidation/dissolution in alkaline solution was
investigated for Co chemical-mechanical polishing (CMP) and post-CMP cleaning …

Corrosion inhibitors play a key role in obtaining global planarization and protecting against
corrosion during copper CMP. However, these inhibitors leave organic residues and …

Cobalt (Co) has been considered as one of the candidates for the barrier material in copper
(Cu) interconnects. As a metal that is less noble than copper, Co poses two challenges to …

We report improved planarization efficiency (ratio of step height reduction and removed
layer thickness) in chemical–mechanical planarization (CMP) of copper lines at a down …

Complexing agents are important additives in chemical mechanical polishing (CMP)
slurries, and they play key roles in the removal rate (RR) and surface quality of copper (Cu) …