Photolithographic patterning of organic materials and plasma-based transfer of photoresist
patterns into other materials have been remarkably successful in enabling the production of …

High-index contrast silicon-on-insulator technology enables wavelength-scale compact
photonic circuits. We report fabrication of photonic circuits in silicon-on-insulator using …

The scientific study of plasma discharges and their material interactions has been crucial to
the development of semiconductor process engineering and, by extension, the entire …

In this article, we have performed detailed investigations of the 193 nm photoresist
transformations after exposure to the so-called HBr and Ar plasma cure treatments using …

The roles of ultraviolet/vacuum ultraviolet (UV/VUV) photons, Ar+ ion bombardment and
heating in the roughening of 193 nm photoresist have been investigated. Atomic force …

We have identified a synergistic roughening mechanism of 193 nm photoresist, where
simultaneous ion bombardment, vacuum ultraviolet (VUV) radiation, and moderate substrate …

Resist roughness is one of the effects of process uncertainties in extreme UV lithography. All
the lithographic elements, such as source, mask, optical system, resist and metrology …

Single mode silicon photonic wire waveguides allow low-loss sharp micro-bends, which
enables compact photonic devices and circuits. The circuit compactness is achieved at the …

The present work focuses on the line width roughness (LWR) transfer and the critical
dimension control during a typical gate stack patterning and shows the benefits of …

Ion-enhanced dry etch methods inflict “etch process damage” through surface ion
bombardment. These inherent limitations in conventional dry etch methods create potential …