Dislocation cores, the regions in the immediate vicinity of dislocation lines, control a number
of properties such as dislocation mobility, cross-slip and short-range interactions with other …

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

We outline details about an extension of the tight-binding (TB) approach to improve total
energies, forces, and transferability. The method is based on a second-order expansion of …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …

We outline recent developments in quantum mechanical atomistic modelling of complex
materials properties that combine the efficiency of semi-empirical quantum-chemistry and …

We report details of the calculation of the lattice thermal conductivity κ in wurtzite GaN.
Numerical simulations are performed for n-type wurtzite GaN with different density of silicon …

We investigated Si-doped GaN epitaxial layers on a (0001)-sapphire substrate using a HCl
vapor-phase etching technique, scanning electron microscopy, atomic force microscopy …

A theory of charged-dislocation-line scattering is developed within the framework of the
Boltzmann transport equation. A fit of the theory to temperature-dependent Hall-effect data in …

Gallium nitride (GaN) is an extremely promising wide band gap semiconductor material for
optoelectronics and high temperature, high power electronics. Actually, GaN is probably the …