The design of future 6th Generation (6G) wireless connect-compute-control networks
requires new approaches for the design of hardware, new materials and hybridization …

GaN-on-Si HEMT technology suffers from RF losses and non-linearities originating from the
conductive Si substrate. The understanding and modeling of substrate performance are the …

This research article proposes a III-nitride Nano-HEMT designed on improved lattice-
matched substrate material of β-Ga2O3. The Silvaco Atlas tool is utilized to investigate the …

We report on our extensive experimental and simulation study to understand ESD failure
mechanisms in RF GaN-on-Si (MIS) HEMTs. As opposed to ESD clamp transistors in LV …

We report a comprehensive analysis of the leakage current mechanism in ion implantation
isolation (I/I/I) regions of GaN high electron mobility transistors. We applied a three-step high …

The reduction of substrate RF losses and non-linearities is key to enable high-performance
GaN-on-Si HEMT based RF front-end modules. In this paper, the impact of the epitaxial III-N …

We demonstrate high linearity of fully processed GaN on 2-mm high resistivity (HR) Si
wafers with high effective resistivity (2 cm). Using two common-gate (MOS-) HEMT devices …

In this paper, Gallium Nitride (GaN) Metal-Insulator-Semiconductor (MIS)-HEMTs are
compared with conventional Schottky Metal-Semiconductor HEMTs in terms of DC and ESD …

III-nitrides, such as gallium nitride (GaN) and aluminium nitride (AlN), possess a wide
bandgap, a high breakdown voltage, and a high thermal conductivity, making them an …

Short-channel Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) often utilize
T-shape gates due to their large gate-line cross-sectional area and subsequent fMAX …