O2 Plasma Alternately Treated ALD-Al2O3 as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs
Q Wang, M Pan, P Zhang, L Wang, Y Yang, X Xie… - IEEE …, 2023 - ieeexplore.ieee.org
This article systematically studies the AlGaN/GaN MIS-HEMTs using the O2 plasma
alternately treated Al2O3 as gate dielectric. The X-ray photoelectron spectroscopy (XPS) …
alternately treated Al2O3 as gate dielectric. The X-ray photoelectron spectroscopy (XPS) …
[HTML][HTML] Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique
In this work, we present the novel application of SiNx stress-engineering techniques for the
suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors …
suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors …
Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure
AC Liu, YW Huang, HC Chen, HC Kuo - Micromachines, 2024 - mdpi.com
This study demonstrates a particular composited barrier structure of high-electron-mobility
transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN …
transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN …
A Broadband and Transient-Accurate AlGaN/GaN HEMT SPICE Model for X-Band RF Applications
Dispersive effects such as trapping play a vital role in determining the performance of
AlGaN/gallium nitride (GaN) high-electron mobility transistors (HEMTs) for RF and power …
AlGaN/gallium nitride (GaN) high-electron mobility transistors (HEMTs) for RF and power …