Degradation of 1.3 μm InAs quantum-dot laser diodes: Impact of dislocation density and number of quantum dot layers
This paper investigates the impact of dislocation density and active layer structure on the
degradation mechanisms of 1.3 μm InAs Quantum Dot (QD) lasers for silicon photonics. We …
degradation mechanisms of 1.3 μm InAs Quantum Dot (QD) lasers for silicon photonics. We …
Ground state lasing at 1.30 µm from InAs/GaAs quantum dot lasers grown by metal–organic chemical vapor deposition
D Guimard, M Ishida, D Bordel, L Li, M Nishioka… - …, 2010 - iopscience.iop.org
We investigated the effects of post-growth annealing on the photoluminescence (PL)
characteristics of InAs/GaAs quantum dots (QDs) grown by metal–organic chemical vapor …
characteristics of InAs/GaAs quantum dots (QDs) grown by metal–organic chemical vapor …
An approach to suppress the blue-shift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post-growth annealing
Effect of post-growth annealing on 10 layer stacked InAs/GaAs quantum dots (QDs) with
InAlGaAs/GaAs combination capping layer grown by molecular beam epitaxy has been …
InAlGaAs/GaAs combination capping layer grown by molecular beam epitaxy has been …
Optical properties and thermionic emission in solar cells with InAs quantum dots embedded within GaNAs and GaInNAs
The optical properties of pin solar cells comprised of InAs quantum dots embedded within
GaNAs and GaInNAs quantum wells are reported. Strain compensating and mediating …
GaNAs and GaInNAs quantum wells are reported. Strain compensating and mediating …
Removal of strain relaxation induced defects by flushing of InAs quantum dots
We report the effect of indium flushing on the electrical and optical properties of strain-
relaxed InAs quantum dots (QDs) embedded in GaAs Schottky diodes. The InAs QDs were …
relaxed InAs quantum dots (QDs) embedded in GaAs Schottky diodes. The InAs QDs were …
Stacked GaAs quantum dots fabricated by refilling of self-organized nanoholes: optical properties and post-growth annealing
We study the photoluminescence and impact of post-growth annealing of stacked, strain-free
GaAs quantum dots fabricated by refilling of self-organized nanoholes using molecular …
GaAs quantum dots fabricated by refilling of self-organized nanoholes using molecular …
Post-growth annealing of type-II GaSb/GaAs quantum dots grown with different V/III ratios
V Polojärvi, A Gubanov, A Schramm, R Koskinen… - Materials Science and …, 2012 - Elsevier
We report the influence of V/III beam-equivalent-pressure ratios and post-growth annealing
on the photoluminescence of GaSb quantum dots grown on GaAs (100) by molecular beam …
on the photoluminescence of GaSb quantum dots grown on GaAs (100) by molecular beam …
Influence of the source to substrate distance on the growth, tribological properties and optical properties of be films
K Li, B Luo, Y He, W Li, J Luo - Journal of Wuhan University of Technology …, 2018 - Springer
The Be films were prepared by thermal evaporation at different sources to substrate
distances (SSD) on glass substrates. The decrease of SSD from 90 mm to 50 mm caused …
distances (SSD) on glass substrates. The decrease of SSD from 90 mm to 50 mm caused …
Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy
T Ohno, Y Oyama - Science and Technology of Advanced …, 2012 - iopscience.iop.org
In this article we review the fundamental properties and applications of sidewall GaAs tunnel
junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular …
junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular …
Novel III-V Heterostructures for High Efficiency Solar Cells: Studies of Electrical and Optical Properties
V Polojärvi - 2016 - researchportal.tuni.fi
The thesis deals with the investigation of optical, electrical and structural properties of III-V
semiconductor materials and nanostructures with applications in the development of next …
semiconductor materials and nanostructures with applications in the development of next …