New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …

The characteristic effects of doping with impurities such as Si, Ge, Se, O, Mg, Be, and Zn on
the electrical and optical properties of GaN-based materials are reviewed. In addition, the …

The fabrication processes of p-type regions for vertical GaN power devices are investigated.
A p-type body layer in a trench gate metal-oxide-semiconductor field-effect transistor …

Hall effect and capacitance-voltage C (V) measurements were performed on p-type GaN: Mg
layers grown on GaN templates by molecular beam epitaxy with a high range of Mg-doping …

High density two dimensional hole gas (2DHG) with a charge density of 1.1× 10 13 cm-2 has
been demonstrated for the first time in GaN/AlGaN heterostructures. The 2DHG is induced …

Schottky diodes with Au/ZnO nanorod (NR)/n-SiC configurations have been fabricated and
their interface traps and electrical properties have been investigated by current-voltage (IV) …

Bulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in
recent years, creating the need for technology computer aided design (TCAD) simulation to …

Recently, there has been increasing research into the use of wide-band-gap
semiconductors for both electronic and optoelectronic devices. 1 Progress in many of these …

In this paper, we fabricated the vertical β-Ga 2 O 3 Schottky barrier diodes with floating metal
ring (FMR) edge termination structure. As the distance between the major Schottky junction …

The frequency dependent capacitance-voltage (C–V) and conductance-voltage (G/ω–V)
characteristics of Au/bio-organic/n-GaN Schottky barrier diodes (SBDs) based on DNA …