High Current Density in Monolayer MoS2 Doped by AlOx
Semiconductors require stable doping for applications in transistors, optoelectronics, and
thermoelectrics. However, this has been challenging for two-dimensional (2D) materials …
thermoelectrics. However, this has been challenging for two-dimensional (2D) materials …
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-
effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large …
effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large …
High-speed black phosphorus field-effect transistors approaching ballistic limit
As a strong candidate for future electronics, atomically thin black phosphorus (BP) has
attracted great attention in recent years because of its tunable bandgap and high carrier …
attracted great attention in recent years because of its tunable bandgap and high carrier …
Interface States in Gate Stack of Carbon Nanotube Array Transistors
Y Liu, S Ding, W Li, Z Zhang, Z Pan, Y Ze, B Gao… - ACS …, 2024 - ACS Publications
A deep understanding of the interface states in metal–oxide–semiconductor (MOS)
structures is the premise of improving the gate stack quality, which sets the foundation for …
structures is the premise of improving the gate stack quality, which sets the foundation for …
[HTML][HTML] On large-signal modeling of GaN HEMTs: past, development and future
In the past few decades, circuits based on gallium nitride high electron mobility transistor
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …
Approaching ballistic transport in monolayer MoS2 transistors with self-aligned 10 nm top gates
CD English, KKH Smithe, RL Xu… - 2016 IEEE International …, 2016 - ieeexplore.ieee.org
We present the first study of 10 nm self-aligned top-gated field-effect transistors (SATFETs)
based on monolayer MoS 2. Using a novel fabrication process, we achieve record saturation …
based on monolayer MoS 2. Using a novel fabrication process, we achieve record saturation …
[图书][B] Fundamentals of Nanotransistors
MS Lundstrom - 2017 - books.google.com
The transistor is the key enabler of modern electronics. Progress in transistor scaling has
pushed channel lengths to the nanometer regime where traditional approaches to device …
pushed channel lengths to the nanometer regime where traditional approaches to device …
Yttrium-doping-induced metallization of molybdenum disulfide for ohmic contacts in two-dimensional transistors
The van der Waals systems could be used to overcome the issue of Fermi-level pinning in
contacts of transistors based on two-dimensional semiconductors. However, the lack of …
contacts of transistors based on two-dimensional semiconductors. However, the lack of …
Accurate nonlinear GaN HEMT simulations from X-to Ka-band using a single ASM-HEMT model
This paper presents for the first time an investigation of the ASM-HEMT model large-signal
accuracy across a wide range of operating frequencies. Comparisons between measured …
accuracy across a wide range of operating frequencies. Comparisons between measured …
3-D full-band Monte Carlo simulation of hot-electron energy distributions in gate-all-around Si nanowire MOSFETs
The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed
using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with …
using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with …