This letter reports vacuum annealing of lateral field-plated-Ga2O3 MOSFETs with significant
current recovery and improvement in the on-state resistance,, after Reactive Ion Etching …

The structural, electronic and optical properties of β-Ga 2 O 3 thin films with different N ion
concentrations are investigated. With N concentrations increasing, the crystallization …

In this study, the state-of-the-art vertical gallium oxide MOSFET with the fin shaped source is
numerically investigated. With the simulation environment, whose results for the electrical …

In this article, we investigate defect nucleation leading to device degradation in β-Ga 2 O 3
Schottky barrier diodes by operating them inside a transmission electron microscope. Such …

The wide-bandgap ternary (Al x Ga 1− x) 2 O 3 forms a heterostructure system with Ga 2 O 3
that is attracting attention for modulation-doped field-effect transistors. The options for gate …

In this article, we investigate defect nucleation leading to device degradation in β-Ga2O3
Schottky barrier diodes by operating them inside a transmission electron microscope. Such …

The wide-bandgap ternary (AlxGa1Àx) 2O3 forms a heterostructure system with Ga2O3 that
is attracting attention for modulation-doped field-effect transistors. The options for gate …