Defects such as oxygen vacancy are widely considered to be critical for the performance of
ferroelectric HfO 2-based devices, and yet atomistic mechanisms underlying various exotic …

Memristors, which combine the behaviors of memory and resistive switching (RS), have a
wide application prospect in information processing and artificial neural networks. The RS …

Polycrystalline manganites with outstanding anisotropic magnetoresistance and
temperature coefficient of magnetization have great potential for application in magnetic …

Organometallic halide perovskites have shown immense potential for light harvesting and
visible light sensing applications. Large CH3NH3PbBr3 single crystals (SC) of size 4× 3.5 …

Herein, a comprehensive investigation into the optical, local chemical state, and electrical
properties of the less explored magnesium oxide (MgO) are presented for resistive switching …

Amorphous hafnium dioxide (a-HfO 2) is widely used in electronic devices, such as ultra-
scaled field-effect transistors and resistive memory cells. The density of oxygen vacancy …

Charge hopping transport is typically modeled by Marcus theory with the coupling strengths
and activation energies extracted from the constrained density functional theory. However …