J Zhang, A Lin, N Patil, H Wei, L Wei… - … on Computer-Aided …, 2012 - ieeexplore.ieee.org
Carbon nanotube field-effect transistors (CNFETs) are excellent candidates for building highly energy-efficient electronic systems of the future. Fundamental limitations inherent to …
Z Wu, Q Ke, J Sun, HY Shum - 2009 IEEE 12th International …, 2009 - ieeexplore.ieee.org
The state-of-the-art content based image retrieval systems has been significantly advanced by the introduction of SIFT features and the bag-of-words image representation. Converting …
Carbon Nanotube Field-Effect Transistors (CNFETs) are excellent candidates for building highly energy-efficient digital systems. However, imperfections inherent in carbon nanotubes …
KK Kim, YB Kim, K Choi - IEEE Transactions on …, 2011 - ieeexplore.ieee.org
This paper proposes a new hybrid MOSFET/carbon nanotube FET (CNFET) power-gating (PG) method using 32 nm technology in the ultralow-voltage region (~ 0.4 V). Traditionally …
Abstract Recently, Multiple Valued Logic (MVL) has attracted attention, because it reduces the area and complexity of circuits when compared to binary logic. Carbon nanotube field …
W Ibrahim, V Beiu, A Beg - IEEE Transactions on Reliability, 2012 - ieeexplore.ieee.org
Introducing redundancy at the device-level has been proposed as the most effective way to improve reliability. With the remarkable reliability of the complementary metal oxide …
P Zarkesh-Ha, AAM Shahi - IEEE Transactions on Electron …, 2010 - ieeexplore.ieee.org
An integrated and compact model for probability of failure in carbon nanotube field-effect transistors (CNFETs) that includes 1) void CNFETs, 2) carbon nanotube (CNT) density …
Using previously developed model for CNT density variation in CNFETs and random dopant fluctuation model in MOSFET, we compared and presented overall device variations in …