Effect of cosubstitution of La and V in thin films on the low-temperature deposition
The ferroelectricity of Bi 4 Ti 3 O 12 (BIT),(Bi 3.2 La 0.8) Ti 3 O 12 (BLT), Bi 4 (Ti 2.97 V 0.03)
O 12 (BTV), and (Bi 3.2 La 0.8)(Ti 2.97 V 0.03) O 12 (BLTV) films prepared at 600° C by …
O 12 (BTV), and (Bi 3.2 La 0.8)(Ti 2.97 V 0.03) O 12 (BLTV) films prepared at 600° C by …
Large remanent polarization of -based thin films modified by the site engineering technique
T Watanabe, T Kojima, T Sakai, H Funakubo… - Journal of applied …, 2002 - pubs.aip.org
The site engineering approach based on site-selective substitutions was utilized to improve
the ferroelectric properties in Bi 4 Ti 3 O 12 thin film. Thin films of (Bi 4− x Nd x)(Ti 3− y V y) O …
the ferroelectric properties in Bi 4 Ti 3 O 12 thin film. Thin films of (Bi 4− x Nd x)(Ti 3− y V y) O …
Heterobimetallic bismuth− transition metal salicylate complexes as molecular precursors for ferroelectric materials. Synthesis and structure of Bi2M2 (sal) 4 (Hsal) 4 …
JH Thurston, KH Whitmire - Inorganic chemistry, 2002 - ACS Publications
The reactions between triphenylbismuth, salicylic acid, and the metal alkoxides M
(OCH2CH3) 5 (M= Nb, Ta) or Ti {OCH (CH3) 2} 4 have been investigated under different …
(OCH2CH3) 5 (M= Nb, Ta) or Ti {OCH (CH3) 2} 4 have been investigated under different …
Thickness-dependent retention behaviors and ferroelectric properties of BiFeO3 thin films on BaPbO3 electrodes
CC Lee, JM Wu - Applied Physics Letters, 2007 - pubs.aip.org
Bi Fe O 3 (BFO) thin films produced with varied film thicknesses ranging from 100 to 230 nm
were fabricated on Ba Pb O 3 (BPO)∕ Pt∕ Ti∕ Si O x∕ Si substrates by rf-magnetron …
were fabricated on Ba Pb O 3 (BPO)∕ Pt∕ Ti∕ Si O x∕ Si substrates by rf-magnetron …
Electrical properties of Cr-doped BiFeO3 thin films fabricated on the p-type Si (100) substrate by chemical solution deposition
SU Lee, SS Kim, HK Jo, MH Park, JW Kim… - Journal of Applied …, 2007 - pubs.aip.org
Ferroelectric Cr-doped BiFeO 3 (BFCr) thin films having a rhombohedrally distorted simple
perovskite structure were fabricated on the p-type Si (100) substrate by the chemical solution …
perovskite structure were fabricated on the p-type Si (100) substrate by the chemical solution …
Properties of Na0. 5Bi0. 5TiO3 ferroelectric films prepared by chemical solution decomposition
Na0. 5Bi0. 5TiO3 thin films have been grown on p-type Si (111) and Pt/Ti/SiO2/Si substrates
by a method of chemical solution decomposition. The structure and microscopy were studied …
by a method of chemical solution decomposition. The structure and microscopy were studied …
Dielectric functions of ferroelectric Bi3. 25La0. 75Ti3O12 thin films on Si (100) substrates
ZG Hu, JH Ma, ZM Huang, YN Wu, GS Wang… - Applied physics …, 2003 - pubs.aip.org
Ferroelectric Bi3. 25La0. 75Ti3O12 BLT thin films were deposited directly on Si100
substrates under annealing temperatures of 590 and 700 C. The optical properties of the …
substrates under annealing temperatures of 590 and 700 C. The optical properties of the …
Effect of La doping on structural and electrical properties of Bi2Ti2O7thin films
XN Yang, BB Huang, HB Wang, SX Shang… - Journal of crystal …, 2004 - Elsevier
La-doped Bi2Ti2O7 thin films have been grown on P-type Si〈 100〉 substrates by a
chemical solution decomposition method. X-ray diffraction analysis confirmed that the …
chemical solution decomposition method. X-ray diffraction analysis confirmed that the …
thin films on ultrathin buffered Si for ferroelectric memory application
We have investigated the physical and electrical properties of Bi 3.25 La 0.75 Ti 3 O 12
(BLT) thin films on Pt/Ti/SiO 2/Si and on Al 2 O 3 (6 nm)/Si, which are used for one-transistor …
(BLT) thin films on Pt/Ti/SiO 2/Si and on Al 2 O 3 (6 nm)/Si, which are used for one-transistor …
Electrical and optical properties of Bi2Ti2O7 thin films prepared by metalorganic decomposition method
Y Hou, T Lin, Z Huang, G Wang, Z Hu, J Chu… - Applied physics …, 2004 - pubs.aip.org
Highly (111) oriented Bi 2 Ti 2 O 7 thin films have been grown on Pt∕ Ti∕ SiO 2∕ Si and Al
2 O 3 substrates by metalorganic decomposition method at 550 C. The structural …
2 O 3 substrates by metalorganic decomposition method at 550 C. The structural …