NP Kumar, M Singh, V Mahey, S Nautiyal… - Applied Physics A, 2020 - Springer
The effect of partial substitution of manganese by silicon in Ni 47 Mn 40− x Si x In 13 (x= 1, 2, 3) on the structural (martensitic), magnetic transitions and associated magnetocaloric …
R Alhalabi, E Nowak, I Prejbeanu… - 2018 Non-Volatile …, 2018 - ieeexplore.ieee.org
Spin Orbit Torque Magnetic RAM (SOT-MRAM) approach represents a new way to overcome over Spin Transfer Torque (STT) memory limitations by separating the reading …
N Jao, AK Ramanathan, J Sampson… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Conventional processors suffer from high access latency and power dissipation due to the demand for memory bandwidth for data-intensive workloads, such as machine learning and …
MNI Khan, S Ghosh - 2020 21st International Symposium on …, 2020 - ieeexplore.ieee.org
Crossbar arrays using emerging Non-Volatile Memory (NVM) technologies offer high density, fast access speed and low-power. However, the bandwidth of the crossbar is limited …
Crossbar arrays using emerging Non-Volatile Memory (NVM) technologies such as Resistive RAM (ReRAM) offer high density, fast access speed, and low-power. However, the …