Design space exploration of ferroelectric tunnel junction toward crossbar memories

N Jao, Y Xiao, AK Saha, SK Gupta… - IEEE Journal on …, 2021 - ieeexplore.ieee.org
We perform a simulation-based analysis on the potential of emerging ferroelectric tunnel
junctions (FTJs) as a memory device for crossbar arrays. Though FTJs are promising due to …

Effect of Si substitution on the structural, magnetic and magnetocaloric properties of Ni–Mn–In Heusler alloys

NP Kumar, M Singh, V Mahey, S Nautiyal… - Applied Physics A, 2020 - Springer
The effect of partial substitution of manganese by silicon in Ni 47 Mn 40− x Si x In 13 (x= 1, 2,
3) on the structural (martensitic), magnetic transitions and associated magnetocaloric …

High density SOT-MRAM memory array based on a single transistor

R Alhalabi, E Nowak, I Prejbeanu… - 2018 Non-Volatile …, 2018 - ieeexplore.ieee.org
Spin Orbit Torque Magnetic RAM (SOT-MRAM) approach represents a new way to
overcome over Spin Transfer Torque (STT) memory limitations by separating the reading …

Sparse vector-matrix multiplication acceleration in diode-selected crossbars

N Jao, AK Ramanathan, J Sampson… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Conventional processors suffer from high access latency and power dissipation due to the
demand for memory bandwidth for data-intensive workloads, such as machine learning and …

Multi-bit read and write methodologies for diode-MTJ crossbar array

MNI Khan, S Ghosh - 2020 21st International Symposium on …, 2020 - ieeexplore.ieee.org
Crossbar arrays using emerging Non-Volatile Memory (NVM) technologies offer high
density, fast access speed and low-power. However, the bandwidth of the crossbar is limited …

Multi-Bit Read Write Methodology For Diode-STTRAM Crossbar Array

MN Khan - 2019 - etda.libraries.psu.edu
Crossbar arrays using emerging Non-Volatile Memory (NVM) technologies such as
Resistive RAM (ReRAM) offer high density, fast access speed, and low-power. However, the …