We derive a dielectric function tensor model approach to render the optical response of
monoclinic and triclinic symmetry materials with multiple uncoupled infrared and far-infrared …

The optical Hall effect is a physical phenomenon that describes the occurrence of magnetic-
field-induced dielectric displacement at optical wavelengths, transverse and longitudinal to …

Fundamental limitations of wide-bandgap semiconductor devices are caused by systematic
trends of the electron and hole effective mass, dopant ionization energy, and carrier drift …

The isotropic average conduction band minimum electron effective mass in Sn-doped
monoclinic single crystal β-Ga 2 O 3 is experimentally determined by the mid-infrared optical …

We present a terahertz (THz) frequency-domain spectroscopic ellipsometer design that
suppresses formation of standing waves by use of stealth technology approaches. The …

Temperature-dependent effective mass in AlGaN/GaN heterostructures was experimentally
observed via THz time domain spectroscopy of 2D plasmons in the range of 80–300 K …

We reduced the operating voltage of AlGaN homojunction tunnel junction (TJ) deep-
ultraviolet (UV) light-emitting diodes (LEDs) by two approaches: the suppression of carbon …

Predicted lateral power device performance as a function of alloy composition is
characterized by a standard lateral device figure-of-merit (LFOM) that depends on mobility …

Mobility and critical electric field for bulk Al x Ga 1-x N alloys across the full composition
range (0≤ x≤ 1) are analyzed to address the potential application of this material system for …

We present calculations of frequency and wavevector dispersion of conductivity of two-
dimensional electrons confined in AlGaN/GaN heterostructures at the arbitrary level of the …