[HTML][HTML] Surface passivation approaches for silicon, germanium, and III–V semiconductors

RJ Theeuwes, WMM Kessels, B Macco - Journal of Vacuum Science & …, 2024 - pubs.aip.org
Semiconductors are key to our modern society, enabling a myriad of fields, including
electronics, photovoltaics, and photonics. The performance of semiconductor devices can be …

On the quantification of Auger recombination in crystalline silicon

LE Black, DH Macdonald - Solar Energy Materials and Solar Cells, 2022 - Elsevier
Quantification of Auger recombination in crystalline silicon is usually challenging because it
requires distinguishing Auger recombination from extrinsic recombination processes …

Review of laser doping and its applications in silicon solar cells

M Vaqueiro-Contreras, B Hallam… - IEEE Journal of …, 2023 - ieeexplore.ieee.org
Laser-doped selective emitter diffusion techniques have become mainstream in solar cell
manufacture covering 60% of the market share in 2022 and are expected to continue to …

[HTML][HTML] POx/Al2O3 stacks for surface passivation of Si and InP

RJ Theeuwes, J Melskens, W Beyer, U Breuer… - Solar Energy Materials …, 2022 - Elsevier
Passivation of semiconductor surfaces is crucial to reduce carrier recombination losses and
thereby enhance the device performance of solar cells and other semiconductor devices …

POx/Al2O3 Stacks for c-Si Surface Passivation: Material and Interface Properties

RJ Theeuwes, J Melskens, LE Black… - ACS applied …, 2021 - ACS Publications
Phosphorus oxide (PO x) capped by aluminum oxide (Al2O3) has recently been discovered
to provide excellent surface passivation of crystalline silicon (c-Si). In this work, insights into …

Atomic-layer-deposited BOx/Al2O3 stack for crystalline silicon surface passivation

X Wang, K Gao, D Xu, K Li, C Xing, X Lou, Z Su… - Solar Energy Materials …, 2023 - Elsevier
Surface passivation is a crucial factor in improving the efficiency of c-Si solar cells. In this
work, we develop a boron oxide/aluminum oxide stack (BO x/Al 2 O 3) using the atomic layer …

Excellent Passivation of n‐Type Silicon Surfaces Enabled by Pulsed‐Flow Plasma‐Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by …

J Melskens, RJ Theeuwes, LE Black… - physica status solidi …, 2021 - Wiley Online Library
Phosphorus oxide (POx) capped by aluminum oxide (Al2O3), prepared by atomic layer
deposition (ALD), has recently been introduced as a surface passivation scheme for planar …