Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
Defects in ferroelectric HfO 2
A Chouprik, D Negrov, EY Tsymbal, A Zenkevich - Nanoscale, 2021 - pubs.rsc.org
The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …
Highly-scaled and fully-integrated 3-dimensional ferroelectric transistor array for hardware implementation of neural networks
Hardware-based neural networks (NNs) can provide a significant breakthrough in artificial
intelligence applications due to their ability to extract features from unstructured data and …
intelligence applications due to their ability to extract features from unstructured data and …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices
About ten years after ferroelectricity was first reported in doped HfO2 polycrystalline films,
there is tremendous interest in this material and ferroelectric oxides are once again in the …
there is tremendous interest in this material and ferroelectric oxides are once again in the …
Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films
Ferroelectric hafnia-based thin films have attracted intense attention due to their
compatibility with complementary metal-oxide-semiconductor technology. However, the …
compatibility with complementary metal-oxide-semiconductor technology. However, the …
Advances in dielectric thin films for energy storage applications, revealing the promise of group IV binary oxides
Among currently available energy storage (ES) devices, dielectric capacitors are optimal
systems owing to their having the highest power density, high operating voltages, and a long …
systems owing to their having the highest power density, high operating voltages, and a long …
Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices
Ferroelectric (FE) and antiferroelectric (AFE) materials are used for several memory‐related
and energy‐related applications. Perovskite materials (eg, bulk ceramics) remain the most …
and energy‐related applications. Perovskite materials (eg, bulk ceramics) remain the most …
Polarization and Resistive Switching in Epitaxial 2 nm Hf0.5Zr0.5O2 Tunnel Junctions
In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions
are being investigated as potential candidates. Complementary metal oxide semiconductor …
are being investigated as potential candidates. Complementary metal oxide semiconductor …
Prospect and challenges of analog switching for neuromorphic hardware
To inaugurate energy-efficient hardware as a solution to complex tasks, information
processing paradigms shift from von Neumann to non-von Neumann computing …
processing paradigms shift from von Neumann to non-von Neumann computing …