; 124, 219906 (2006)]} XC functional. The band gap of InGaN alloys as a function of In
content is calculated and a strong bowing at low In content is found, described by bowing …

Abstract Nitride materials (AlN, GaN, InN and their alloys) are commonly used in
optoelectronics, high-power and high-frequency electronics. Polarity is the essential …

Surface donor states with distributed and finite density are implemented in Schrödinger–
Poisson simulations of AlGaN/GaN high electron mobility transistors, with the goal of …

N-polar AlN epilayers were grown on the N-face of single-crystal bulk AlN substrates by
plasma-assisted molecular beam epitaxy. A combination of in situ thermal deoxidation and …

Using low-temperature cathodoluminescence spectroscopy, we study the properties of N-
and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN {0001}. Compared …

Surface oxides on AlN are shown to result in a dense layer of stacking faults that create
dislocations at the regrowth interface, and ex situ cleaning methods are demonstrated to not …

This work investigated the impact of in-situ N2 or H2/N2 plasma pretreatment on the
interface and border trap states between plasma-enhanced atomic layer deposition …

By using first-principles calculation methods, the structural and electronic properties of the
adsorption of oxygen on wurtzite AlN (101̅0) and (112̅0) surfaces are investigated …

Short range ordered (SRO) plasmonic nanohole arrays have a distinct surface plasmon
polariton resonance in the visible region and exhibit an excellent sensing capability toward …

Gallium nitride based high electron mobility transistors are widely known for their
operational instabilities regarding interface defects to the dielectric. In this paper, we discuss …