Diamond is a highly attractive ultrawide bandgap semiconductor for next-generation high-
power switching devices and RF devices for its superior physical and electrical properties …

Beta-phase gallium oxide (β-Ga 2 O 3) research has gained accelerated pace nowadays.
However, the high acceptor activation energy obstructs the development of homojunction …

Beta phase-gallium oxide (β-Ga 2 O 3) is an emerging ultrawide bandgap semiconductor
but lacks efficient p-type doping, which hinders development of high-performance bipolar …

In this work, we report a single crystalline p-Si/(001)-Ga2O3 heterojunction diode fabricated
using semiconductor grafting technology. The diode showed a breakdown voltage (of~ 0.86 …

At the time when many nonlinear optical (NLO) materials for frequency conversion of laser
sources in the mid and long-wave infrared have achieved their fundamental or technological …

We report high-quality Ga 2 O 3 grown on an AlGaN/AlN/Sapphire in a single growth run in
the same Metal Organic Chemical Vapor Deposition reactor with an AlO x interlayer at the …

As an attractive next generation ultrawide bandgap material, Ga 2 O 3 has been
demonstrated to be capable of high voltage operation. However, the lack of shallow p-type …

The $\beta $-Ga $ _2 $ O $ _3 $ has exceptional electronic properties with vast potential in
power and RF electronics. Despite the excellent demonstrations of high-performance …

The recently demonstrated approach of grafting n-type GaN with p-type Si or GaAs, by
employing ultrathin Al 2 O 3 at the interface, has shown the feasibility to overcome the poor p …

The ineffective p-type doping of nitrides using magnesium (Mg), the best available dopant,
has limited the development and performance of all III-nitride-based devices, including …