The roadmap of 2D materials and devices toward chips

A Liu, X Zhang, Z Liu, Y Li, X Peng, X Li, Y Qin, C Hu… - Nano-Micro Letters, 2024 - Springer
Due to the constraints imposed by physical effects and performance degradation, silicon-
based chip technology is facing certain limitations in sustaining the advancement of Moore's …

Two-dimensional semiconductors based field-effect transistors: Review of major milestones and challenges

K Nandan, A Agarwal, S Bhowmick… - Frontiers in …, 2023 - frontiersin.org
Two-dimensional (2-D) semiconductors are emerging as strong contenders for the future of
Angstrom technology nodes. Their potential lies in enhanced device scaling and energy …

High-throughput screening of 2D materials identifies p-type monolayer WS2 as potential ultra-high mobility semiconductor

VA Ha, F Giustino - npj Computational Materials, 2024 - nature.com
Abstract 2D semiconductors offer a promising pathway to replace silicon in next-generation
electronics. Among their many advantages, 2D materials possess atomically-sharp surfaces …

Projected performance of Si-and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes

YC Lu, JK Huang, KY Chao, LJ Li, VPH Hu - Nature Nanotechnology, 2024 - nature.com
Researchers have been developing 2D materials (2DM) for electronics, which are widely
considered a possible replacement for silicon in future technology. Two-dimensional …

Metrology for 2D materials: a perspective review from the international roadmap for devices and systems

U Celano, D Schmidt, C Beita, G Orji, A Davydov… - Nanoscale …, 2024 - pubs.rsc.org
The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D
materials into high-volume manufacturing as channel materials within the next decade …

3D integration of 2D electronics

D Jayachandran, NU Sakib, S Das - Nature Reviews Electrical …, 2024 - nature.com
The adoption of three-dimensional (3D) integration has revolutionized NAND flash memory
technology, and a similar transformative potential exists for logic circuits, by stacking …

Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping

S Liu, X Xiong, X Wang, X Shi, R Huang… - Science China Information …, 2024 - Springer
Abstract Two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductor
materials exhibit extraordinary electrical properties, holding promise for the realization of …

Future materials for beyond Si integrated circuits: a Perspective

L Colombo, S El Kazzi, M Popovici… - … on Materials for …, 2024 - ieeexplore.ieee.org
The integration of novel materials has been pivotal in advancing Si-based devices ever
since Si became the preferred material for transistors, and later, integrated circuits. New …

[PDF][PDF] Exploring Opportunities and Challenges of SRAM Based on 2D-Material FETs

VPH Hu - iedms-sndct2024.tsri.org.tw
Two-dimensional transition metal dichalcogenides (2D TMDs) show promise for highly
scaled logic transistors, leveraging their ultrathin profile and exceptional electrostatic control …