The mid-infrared (MIR) wavelength range of the electromagnetic spectrum offers a number
of applications of growing importance such as photonic sensors for environment, industry or …

Abstract In x Ga 1-x As y Sb 1-y epilayers with a fixed In content of x= 0.145 were grown on
GaSb (100) substrates using liquid-phase epitaxy (LPE). The lattice mismatch between the …

Abstract In 0.145 Ga 0.855 As y Sb 1− y semiconductor alloys were grown on GaSb (100)
substrates by varying the As content by liquid phase epitaxy (LPE). We demonstrated that …

Antimonide− based p− n junctions are particularly attractive for a wide variety of
optoelectronic applications in the near and mid-infrared wavelength range. In this work …

14.1 Introduction k Among III–V semiconductors the so-called “antimonides” refer to the Sb-
rich III–V comk pounds. They include GaSb, InSb, and AlSb which can all be alloyed with …

We demonstrate high performance 2150 nm InAs/InGaAs/InP quantum well (QW) lasers
grown by metalorganic vapor phase epitaxy. The laser structure consists of two InAs/InGaAs …

We have investigated the structural characteristics and the device performance of three-
stack InGaAsSb/AlGaAsSb quantum-well (QW) light-emitting diodes (LEDs) grown by using …

The interesting problem of the first phase transition which is induced by pressure in AlSb
and GaSb antimonide binaries is revisited. Then, the case of the AlGaSb ternary has been …

GaSb/InAs/GaSb layer stacks have been grown on InAs metamorphic substrates
(pseudosubstrates) by MOVPE, using nitrogen as major carrier gas. We demonstrate that …