A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …
[HTML][HTML] β-Gallium oxide power electronics
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
[HTML][HTML] Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance
AY Polyakov, VI Nikolaev, EB Yakimov, F Ren… - Journal of Vacuum …, 2022 - pubs.aip.org
A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …
Self-trapped hole and impurity-related broad luminescence in β-Ga2O3
This work explores the luminescence properties of self-trapped holes and impurity-related
acceptors using one-dimensional configuration coordinate diagrams derived from hybrid …
acceptors using one-dimensional configuration coordinate diagrams derived from hybrid …
[HTML][HTML] Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition
Vertical β-Ga 2 O 3 Schottky diodes from metal-organic chemical vapor deposition (MOCVD)-
grown epitaxial films are reported in this paper for high-power application devices. The …
grown epitaxial films are reported in this paper for high-power application devices. The …
Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
Sn doping of (010) β-Ga 2 O 3 grown by conventional plasma-assisted molecular beam
epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied …
epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied …
Fabrication and properties of N-doped top layer of Ga2O3 films by magnetron sputtering
N Zhang, Y Wang, Z Chen, B Zhou, J Gao, Y Wu… - Applied Surface …, 2022 - Elsevier
The β-Ga 2 O 3 films with a top layer doping of nitrogen (N) were prepared by RF magnetron
sputtering. The relationship of parameters (eg nitrogen flow rate and annealing …
sputtering. The relationship of parameters (eg nitrogen flow rate and annealing …
[HTML][HTML] Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3
The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown
(010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8× 10 13 cm− 2 …
(010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8× 10 13 cm− 2 …
Swift heavy ion irradiation-induced modifications in the electrical and surface properties of β-Ga2O3
The electrical device characteristics of Ni/β-Ga 2 O 3 vertical Schottky barrier diodes (SBDs)
were measured in situ during the irradiation of 120 MeV Ag 7+ swift heavy ions (SHIs) …
were measured in situ during the irradiation of 120 MeV Ag 7+ swift heavy ions (SHIs) …
[HTML][HTML] Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies
The ability to achieve highly resistive beta-phase gallium oxide (β-Ga 2 O 3) layers and
substrates is critical for β-Ga 2 O 3 high voltage and RF devices. To date, the most common …
substrates is critical for β-Ga 2 O 3 high voltage and RF devices. To date, the most common …