A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …

Neutron personal dosimetry is necessary for the monitoring of exposed workers, not only in
nuclear industry and related activities but also in the growing number of neutron producing …

The spontaneous polarization (SP) and piezoelectric (PZ) constants of B x Al 1-x N and B x
Ga 1-x N (0≤ x≤ 1) ternary alloys were calculated with the hexagonal structure as …

Using density-functional theory (DFT) within local density approximation (LDA), the
electronic and optical properties of GaN, BN and BGaN alloy have been investigated in zinc …

In this work, wurtzite BAlN layers with boron composition as high as 12% were successfully
grown by MOVPE. The growth was performed at 650° C and then annealed at 1020° C. Low …

Abstract Five-period AlN/BAlN heterostructure containing boron as high as 11% has been
successfully grown by MOVPE. Good periodicity of two alternative layers has been observed …

III-nitride alloys continue to drive advances in electronic and optoelectronic devices.
Recently, boron-containing nitride alloys have been explored with the goal of expanding the …

InGaN-based visible light-emitting diodes (LEDs) find commercial applications for solid-state
lighting and displays, but lattice mismatch limits the thickness of InGaN quantum wells that …

This work theoretically studies boron-containing ternary and quaternary lattice-matched
quantum dot (QD) structures that emit ultraviolet (UV) wavelength by varying the boron mole …

Laser assisted atom probe tomography is used to characterize the alloy distribution in
BGaN. The effect of the evaporation conditions applied on the atom probe specimens on the …