(57) ABSTRACT A method of operating a memory device that includes a plurality of stages
each having a plurality of page buffers. The method including performing a verify operation …

A memory system includes multiple storage devices that each include a nonvolatile memory
device. A client device is configured to collect deterioration information of the nonvolatile …

Some embodiments include apparatuses and methods using a substrate, a first memory cell
block including first memory cell strings located over the substrate, first data lines coupled to …

Some embodiments include apparatuses and methods using a substrate, a first memory cell
block including first memory cell strings located over the substrate, first data lines coupled to …

(57) ABSTRACT A method of setting the reference voltage for sensing data states in
integrated circuits including ferroelectric random access memory (FRAM) cells of the one …

Apparatus and methods are disclosed, including an appara tus having first and second units
of vertically arranged strings of memory cells, each unit including multiple tiers of a …

A nonvolatile semiconductor memory device includes a memory cell array. The memory
cells of the memory cell array can be programmed to have different threshold voltages. A …

Some embodiments include apparatuses and methods of using the apparatuses. One of the
apparatuses includes a substrate, a first deck including first memory cell strings located over …

Apparatus and methods are disclosed, including an apparatus that includes a number of
tiers of a first semiconductor material, each tier including at least one access line of at least …

2022-03-02 Assigned to SAMSUNG ELECTRONICS CO., LTD. reassignment SAMSUNG
ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT …