Normally-off semiconductor devices
Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided.
A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non …
A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non …
Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
Integrated high efficiency lateral field effect rectifier and HEMT devices of GaN or analogous
semiconductor material, methods for manufacturing thereof, and systems which include such …
semiconductor material, methods for manufacturing thereof, and systems which include such …
Enhancement mode III-nitride FET
R Beach - US Patent 7,382,001, 2008 - Google Patents
5,349.24 A 9, 1994 Tehranet al... 257.192 nally off characteristics. The recesses formed with
the gate 5,594.26. A 1/1997 Lee et al. 257.192 electrode can have sloped sides. The gate …
the gate 5,594.26. A 1/1997 Lee et al. 257.192 electrode can have sloped sides. The gate …
Encapsulation for phosphor-converted white light emitting diode
A Chakraborty - US Patent 9,287,469, 2016 - Google Patents
6,526,082 6,653,765 6,657,393 6,746,889 6,784,463 6,791,259 6,870,311 6,878,975
6,882,051 6,932,497 6,949,774 7,005,679 7,083,490 7,087,936 7,102,152 7,194,170 …
6,882,051 6,932,497 6,949,774 7,005,679 7,083,490 7,087,936 7,102,152 7,194,170 …
Enhancement-mode III-N devices, circuits, and methods
2005/00591.97 A1 3/2005 Yamashita et al. 2005, 0110054 A1 5, 2005 Wohlmuth 2005,
01895.61 A1 9, 2005 Kinzer et al. 2005/0277255 A1 12, 2005 Asano 2006/0060871 A1 …
01895.61 A1 9, 2005 Kinzer et al. 2005/0277255 A1 12, 2005 Asano 2006/0060871 A1 …
Aluminum free group III-nitride based high electron mobility transistors
AW Saxler - US Patent 7,615,774, 2009 - Google Patents
Aluminum free high electron mobility transistors (HEMTs) and methods of fabricating
aluminum free HEMTs are pro vided. In some embodiments, the aluminum free HEMTs …
aluminum free HEMTs are pro vided. In some embodiments, the aluminum free HEMTs …
Reliable normally-off III-nitride active device structures, and related methods and systems
J Chen - US Patent 8,502,323, 2013 - Google Patents
A field-effect transistor includes a first gate, a second gate held at a substantially fixed
potential in a cascode configuration, and a semiconductor channel. The semiconductor …
potential in a cascode configuration, and a semiconductor channel. The semiconductor …
High breakdown enhancement mode gallium nitride based high electron mobility transistors with integrated slant field plate
CS Suh, Y Dora, UK Mishra - US Patent App. 11/841,476, 2008 - Google Patents
High breakdown enhancement mode gallium nitride (GaN) based high electron mobility
transistors (HEMTs) with inte grated slant field plates. These HEMTs have an epilayer struc …
transistors (HEMTs) with inte grated slant field plates. These HEMTs have an epilayer struc …
GaN/AlGaN/GaN dispersion-free high electron mobility transistors
L Shen, SJ Heikman, UK Mishra - US Patent 7,700,973, 2010 - Google Patents
(57) ABSTRACT Related US Application Data (60) Provisional application No. 60/510,695,
filed on Oct A dispersion-free high electron mobility transistor (HEMT), 10, 2003 pp sw--as …
filed on Oct A dispersion-free high electron mobility transistor (HEMT), 10, 2003 pp sw--as …
III-nitride current control device and method of manufacture
R Beach - US Patent 8,174,048, 2012 - Google Patents
(57) ABSTRACT A III-nitride device includes a recessed electrode to produce a nominally
off, or an enhancement mode, device. By provid ing a recessed electrode, a conduction …
off, or an enhancement mode, device. By provid ing a recessed electrode, a conduction …