Control of band discontinuities in semiconductor heterostructures may introduce a new
important degree of freedom in the design of heterojunction devices and allow independent …

The structural, electrical and optical properties of epitaxial semiconductor layers, delta-
doped with impurity atoms, are reviewed. The majority of the discussion relates to GaAs, the …

An outline of infrared localized vibrational mode absorption spectroscopy relevant to silicon
impurities in GaAs is presented. Absorption lines from Si Ga donors, Si As acceptors, Si Ga …

In this article, δ-doping of III–V semiconductors (III–Vs) grown by metal organic vapour
phase epitaxy (MOVPE) is reviewed in respect to the parametric dependencies of δ-doping …

There currently exists a wide range of powerful techniques for probing surfaces, mainly
involving the use of electron or ion beams under high-or ultra-high-vacuum conditions …

The silicon concentration profile in Si–GaAs 001 superlattices grown by molecular beam
epitaxy was investigated using scanning transmission electron microscopy high-angle …

Al/Si/GaAs (001) diode structures grown by molecular beam epitaxy were examined as a
function of the thickness of the Si interface layer and the intensity of the As or Al flux …

Using near-edge x-ray absorption fine structure, the first experimental determination of Si
atom concentrations occupying As sites in Si-doped GaAs (100) is reported. The …

Low-noise infrared (IR) absorption measurements of localized vibrational modes (LVM's)
showed that Si As acceptors, Si Ga-Si As pairs, and a deep trap Si-X (V Ga-Si As-As Ga), as …

High‐resolution triple‐axis x‐ray diffractometry has been used to examine the structural
properties of a δ‐doped superlattice of sixty periods, each consisting of half a monolayer of …